ISSI IS46TR16128AL-15HBLA1-TR

Manufacturer	ISSI
MPN	IS46TR16128AL-15HBLA1-TR
LCSC Part #	C20426798
Packaging	96-TWBGA (9x13)
Customer #
Key Attributes	1.283V~1.45V 2Gbit 667MHz DDR3L SDRAM 96-TWBGA (9x13) Memory (ICs) RoHS
Datasheet	ISSI IS46TR16128AL-15HBLA1-TR

Products Specifications

Type	Description	All
Category	Integrated Circuits (ICs)/Memory/Memory (ICs)
Manufacturer	ISSI
Packaging	96-TWBGA (9x13)
Refresh Current	-
Voltage - Supply	1.283V~1.45V
Memory Size	2Gbit
Operating temperature	-40℃~+95℃
Clock Frequency	667MHz
Features	Auto self-refresh;Auto precharge function;Asynchronous reset function;Dynamic on-chip termination;Write leveling function;Data mask function
Memory Format	DDR3L SDRAM
Current - Supply	-

AI Translation

Standard voltage: VDD and VDDQ = 1.5V ± 0.075V
Low voltage (L): VDD and VDDQ = 1.35V + 0.1V, - 0.067V
High-speed data transfer rate, system frequency up to 933MHz
8 internal banks, concurrent operation
8n prefetch architecture
Programmable CAS latency: 5, 6, 7, 8, 9, 10, and 11
Programmable additive latency: 0, CL - 1, CL - 2
tCK-based programmable CAS write latency (CWL)
Programmable burst length: 4 and 8
Programmable burst sequence: sequential or interleaved
Dynamic BL switching
Auto self-refresh (ASR)
Self-refresh temperature (SRT)
Refresh interval: 7.8μs (8192 cycles / 64ms), Tc = -40°C to 85°C; 3.9μs (8192 cycles / 32ms), Tc = 85°C to 105°C
Partial array self-refresh
Asynchronous reset pin
TDQS (Termination Data Strobe) support (x8 only)
OCD (Off-Chip Driver impedance adjustment)
Dynamic ODT (On-Die Termination)
Driver strength: RZQ/7, RZQ/6 (RZQ = 240Ω)
Write leveling
Operating temperature: Commercial (Tc = 0°C to +95°C); Industrial (Tc = -40°C to +95°C); Automotive A1 (Tc = -40°C to +95°C); Automotive A2 (Tc = -40°C to +105°C)

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Type	Description	All
Category	Integrated Circuits (ICs)/Memory/Memory (ICs)
Manufacturer	ISSI
Packaging	96-TWBGA (9x13)
Refresh Current	-
Voltage - Supply	1.283V~1.45V
Memory Size	2Gbit
Operating temperature	-40℃~+95℃
Clock Frequency	667MHz
Features	Auto self-refresh;Auto precharge function;Asynchronous reset function;Dynamic on-chip termination;Write leveling function;Data mask function
Memory Format	DDR3L SDRAM
Current - Supply	-

AI Translation

Standard voltage: VDD and VDDQ = 1.5V ± 0.075V
Low voltage (L): VDD and VDDQ = 1.35V + 0.1V, - 0.067V
High-speed data transfer rate, system frequency up to 933MHz
8 internal banks, concurrent operation
8n prefetch architecture
Programmable CAS latency: 5, 6, 7, 8, 9, 10, and 11
Programmable additive latency: 0, CL - 1, CL - 2
tCK-based programmable CAS write latency (CWL)
Programmable burst length: 4 and 8
Programmable burst sequence: sequential or interleaved
Dynamic BL switching
Auto self-refresh (ASR)
Self-refresh temperature (SRT)
Refresh interval: 7.8μs (8192 cycles / 64ms), Tc = -40°C to 85°C; 3.9μs (8192 cycles / 32ms), Tc = 85°C to 105°C
Partial array self-refresh
Asynchronous reset pin
TDQS (Termination Data Strobe) support (x8 only)
OCD (Off-Chip Driver impedance adjustment)
Dynamic ODT (On-Die Termination)
Driver strength: RZQ/7, RZQ/6 (RZQ = 240Ω)
Write leveling
Operating temperature: Commercial (Tc = 0°C to +95°C); Industrial (Tc = -40°C to +95°C); Automotive A1 (Tc = -40°C to +95°C); Automotive A2 (Tc = -40°C to +105°C)