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VBsemi Elec SI7860DP-T1-GE3-VB product image
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VBsemi Elec SI7860DP-T1-GE3-VB

Manufacturer
VBsemi ElecAsian Brands
MPN
SI7860DP-T1-GE3-VB
LCSC Part #
C20417684
Packaging
DFN5x6-8
Customer #
Key Attributes
MOSFET N-CH 30V 80A DFN5x6-8
DatasheetVBsemi Elec SI7860DP-T1-GE3-VB
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 34
34 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.8413$ 0.7152$ 0.72
10+$ 0.716$ 0.6086$ 6.09
30+$ 0.6542$ 0.5561$ 16.68
100+$ 0.5923$ 0.5035$ 50.35
500+$ 0.4768$ 0.4053$ 202.65
1,000+$ 0.4589$ 0.3901$ 390.10
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVBsemi Elec
PackagingDFN5x6-8
Operating Temperature-55℃~+175℃
Drain to Source Voltage30V
Output Capacitance(Coss)425pF
Current - Continuous Drain(Id)80A
Ciss-Input Capacitance1.18nF
Pd - Power Dissipation155W
Reverse Transfer Capacitance (Crss)170pF
RDS(on)7mΩ@10V;9mΩ@4.5V
Number1 N-channel
Gate Charge(Qg)31nC@10V;31.5nC@4.5V
Gate Threshold Voltage (Vgs(th))2V
TypeN-Channel

Features

AI Translation
  • Trench power MOSFET
  • 100% Rg and UIS tested
  • Compliant with EU RoHS Directive 2011/65/EU

Applications

AI Translation

-OR Operation-Server-DC-DC Conversion

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