XTX XT27G02BTSIGA

The XT27G02B is a single 3.3v 2Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048+64) bytes x 64 pages x 2048 blocks. The device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes x 64 pages). The XT27G02B is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. The XT27G02B has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected internally.

• Single Level per Cell (SLC) Technology
• ECC requirement: 0bit/528Bytes, with build-in ECC controller to implement 8 bit/528Bytes internally
• Power Supply Voltage Voltage range: 2.7V ~ 3.6V
• Organization Page size: x8 (2048 + 64) bytes; 64 - bytes spare area Block size: x8 (128k + 4k) bytes Plane size: 1024 Blocks per Plane 2008 block (min) ~ 2048 block (max)
• Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read, ECC Status Read
• Access time Cell array to register: 25μs (max) Serial Read Cycle: 25 ns (min) (CL = 50pF)
• Program/Erase time Auto Page Program: 300 µs /page (typ.) Auto Block Erase: 3.5 ms/block( typ.)
• Reliability 10 Year Data retention (Typ)
• Moisture Sensitivity Level: MSL3
• Package 48-pin TSOP (12 * 20mm) All Packages are RoHS Compliant and Halogen-free