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VISHAY SQJQ936E-T1_GE3 product image
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VISHAY SQJQ936E-T1_GE3RoHS

Manufacturer
VISHAY
MPN
SQJQ936E-T1_GE3
LCSC Part #
C20346174
Packaging
-
Customer #
Key Attributes
100A 25W 2.3mΩ@10V 3.5V FET, MOSFET Arrays RoHS
Datasheetpdf iconVISHAY SQJQ936E-T1_GE3

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerVISHAY
Packaging-
Current - Continuous Drain(Id)100A
Pd - Power Dissipation25W
RDS(on)2.3mΩ@10V
Gate Threshold Voltage (Vgs(th))3.5V
Drain to Source Voltage40V
TypeN-Channel
Input Capacitance(Ciss)6.6nF
Gate Charge(Qg)113nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)2.03nF
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2000
Sales UnitPiece

Features

AI Translation
  • 4th generation TrenchFET power MOSFET
  • AEC-Q101 qualified
  • 100% tested for Rg and UIS
  • Fully lead (Pb)-free device

Applications

AI Translation
  • Synchronous rectification
  • Primary-side switching
  • DC/DC converters
  • Power supplies
  • Motor drive control
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QtyUnit Price(Reference Only)Total Amount
1+$ 3.4365$ 3.44
200+$ 1.3714$ 274.28
500+$ 1.3254$ 662.70
1,000+$ 1.3032$ 1303.20
Standard Packaging2000/Full Reel
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