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VISHAY SISS5808DN-T1-GE3 product image
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VISHAY SISS5808DN-T1-GE3

Manufacturer
VISHAY
MPN
SISS5808DN-T1-GE3
LCSC Part #
C20346160
Packaging
PowerPAK1212-8S
Customer #
Key Attributes
80V 66.6A 65.7W 8.3mΩ@7.5V N-Channel PowerPAK1212-8S Single FETs, MOSFETs RoHS
DatasheetVISHAY SISS5808DN-T1-GE3
RoHS Compliance1 documents available
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
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QtyUnit Price(Reference Only)Total Amount
1+$ 2.0369$ 2.04
200+$ 0.8138$ 162.76
500+$ 0.787$ 393.50
1,000+$ 0.7728$ 772.80
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
PackagingPowerPAK1212-8S
Drain to Source Voltage80V
Operating Temperature-55℃~+150℃
Current - Continuous Drain(Id)66.6A
Pd - Power Dissipation65.7W
RDS(on)8.3mΩ@7.5V
Gate Charge(Qg)24nC@10V
Gate Threshold Voltage (Vgs(th))4V
TypeN-Channel
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Features

AI Translation
  • TrenchFET 5th generation power MOSFET
  • Ultra-low RDS × Qg figure of merit (FOM)
  • Optimized for lowest RDS × Qoss FOM
  • 100% Rg and UIS tested

Applications

AI Translation
  • Synchronous Rectification
  • Primary-Side Switch
  • DC/DC Converter
  • OR Gate and Hot-Swap Switch
  • Power Supply
  • Motor Drive Control
  • Battery Management