GigaDevice Semicon Beijing GD25LB512MEYJGR
| Fabricante | GigaDevice Semicon BeijingAsian Brands |
| Cód. da peça | GD25LB512MEYJGR |
| Nº LCSC | C20278504 |
| Emb. | WSON-8(6x8) |
| Número do Cliente | |
| Atrib. princ. | 512Mbit 1.65V~2V 166MHz SPI WSON-8(6x8) Memory |
| Folha de Dados | GigaDevice Semicon Beijing GD25LB512MEYJGR |
| Peças alternativas | 1 |
Especificações do Produto
| Tipo | Descrição | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Fabricante | GigaDevice Semicon Beijing | |
| Emb. | WSON-8(6x8) | |
| Operating Temperature | - | |
| Features | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 1.65V~2V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 166MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | 200ms@(64KB) | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 180us | |
| Standby Supply Current | 20uA | |
| Interface | SPI |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Fabricante | GigaDevice Semicon Beijing | |
| Emb. | WSON-8(6x8) | |
| Operating Temperature | - | |
| Features | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 1.65V~2V | |
| Program / Erase Cycles | 100,000 cycles |
| Tipo | Descrição | |
|---|---|---|
| Clock Frequency | 166MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | 200ms@(64KB) | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 180us | |
| Standby Supply Current | 20uA | |
| Interface | SPI |
Descrição
The GD25LB512ME (512M-bit) Serial flash supports the standard Serial Peripheral Interface (SPI), and supports the Quad SPI and DTR mode: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), I/O3, and RESET#. The Quad output data is transferred with speed of 664Mbits/s, the Quad I/O data is transferred with speed of 532Mbits/s, and the DTR Quad I/O data is transferred with speed of 720Mbits/s.
Recursos
- 512M-bit Serial Flash - 64M-Byte - 256 Bytes per programmable page
- Standard, Quad SPI, DTR, QPI
- Standard SPI: SCLK, CS#, SI, SO, WP#, RESET#
- Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3, RESET#
- QPI: SCLK, CS#, IO0, IO1, IO2, IO3, RESET#
- SPI DTR (Double Transfer Rate) Read
- 3 or 4-Byte Address Mode
- High Speed Clock Frequency
- 166MHz for fast read
- Quad I/O Data transfer up to 532Mbits/s
- QPI Mode Data transfer up to 532Mbits/s
- DTR Quad I/O Data transfer up to 720Mbits/s
- Allows XIP (eXecute in Place) Operation
- High speed Read reduce overall XiP instruction fetch time
- Continuous Read with Wrap further reduce data latency to fill up SoC cache
- Software/Hardware Write Protection
- Write protect all/portion of memory via software
- Enable/Disable protection with WP# Pin
- Individual Block Protection
- Fast Program/Erase Speed
- Page Program time: 0.18ms typical
- Sector Erase time: 30ms typical
- Block Erase time: 0.1/0.2s typical
- Chip Erase time: 100s typical
- Flexible Architecture
- Sector of 4K-Byte
- Block of 32/64K-Byte
- Erase/Program Suspend/Resume
- Low Power Consumption
- 20μA typical stand-by current
- 4μA typical power-down current
- Advanced Security Features
- 128-bit Unique ID
- 4K-Byte Security Registers With OTP Lock
- Single Power Supply Voltage
- Full voltage range: 1.65~2.0V
- Endurance and Data Retention
- Minimum 100,000 Program/Erase Cycles
- 20-year data retention typical
- Package Information
- SOP16 300mil
- WSON8 (8x6mm)
- TFBGA-24ball (5x5 Ball Array)
- WLCSP 3-2-3 ball array
| Qtd. | Preço unit.(Apenas para referência) | Valor total |
|---|---|---|
| 1+ | $ 14.5307 | $ 14.53 |
| 200+ | $ 5.799 | $ 1159.80 |
| 500+ | $ 5.6045 | $ 2802.25 |
| 1,000+ | $ 5.5089 | $ 5508.90 |
Encapsulamento Padrão3000/Full Reel | ||
Especificações do Produto
| Tipo | Descrição | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Fabricante | GigaDevice Semicon Beijing | |
| Emb. | WSON-8(6x8) | |
| Operating Temperature | - | |
| Features | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 1.65V~2V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 166MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | 200ms@(64KB) | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 180us | |
| Standby Supply Current | 20uA | |
| Interface | SPI |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Fabricante | GigaDevice Semicon Beijing | |
| Emb. | WSON-8(6x8) | |
| Operating Temperature | - | |
| Features | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 1.65V~2V | |
| Program / Erase Cycles | 100,000 cycles |
| Tipo | Descrição | |
|---|---|---|
| Clock Frequency | 166MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | 200ms@(64KB) | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 180us | |
| Standby Supply Current | 20uA | |
| Interface | SPI |
Descrição
The GD25LB512ME (512M-bit) Serial flash supports the standard Serial Peripheral Interface (SPI), and supports the Quad SPI and DTR mode: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), I/O3, and RESET#. The Quad output data is transferred with speed of 664Mbits/s, the Quad I/O data is transferred with speed of 532Mbits/s, and the DTR Quad I/O data is transferred with speed of 720Mbits/s.
Recursos
- 512M-bit Serial Flash - 64M-Byte - 256 Bytes per programmable page
- Standard, Quad SPI, DTR, QPI
- Standard SPI: SCLK, CS#, SI, SO, WP#, RESET#
- Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3, RESET#
- QPI: SCLK, CS#, IO0, IO1, IO2, IO3, RESET#
- SPI DTR (Double Transfer Rate) Read
- 3 or 4-Byte Address Mode
- High Speed Clock Frequency
- 166MHz for fast read
- Quad I/O Data transfer up to 532Mbits/s
- QPI Mode Data transfer up to 532Mbits/s
- DTR Quad I/O Data transfer up to 720Mbits/s
- Allows XIP (eXecute in Place) Operation
- High speed Read reduce overall XiP instruction fetch time
- Continuous Read with Wrap further reduce data latency to fill up SoC cache
- Software/Hardware Write Protection
- Write protect all/portion of memory via software
- Enable/Disable protection with WP# Pin
- Individual Block Protection
- Fast Program/Erase Speed
- Page Program time: 0.18ms typical
- Sector Erase time: 30ms typical
- Block Erase time: 0.1/0.2s typical
- Chip Erase time: 100s typical
- Flexible Architecture
- Sector of 4K-Byte
- Block of 32/64K-Byte
- Erase/Program Suspend/Resume
- Low Power Consumption
- 20μA typical stand-by current
- 4μA typical power-down current
- Advanced Security Features
- 128-bit Unique ID
- 4K-Byte Security Registers With OTP Lock
- Single Power Supply Voltage
- Full voltage range: 1.65~2.0V
- Endurance and Data Retention
- Minimum 100,000 Program/Erase Cycles
- 20-year data retention typical
- Package Information
- SOP16 300mil
- WSON8 (8x6mm)
- TFBGA-24ball (5x5 Ball Array)
- WLCSP 3-2-3 ball array
C20278504 Biblioteca EasyEDA
Conformidade & Códigos de Exportação
| Tipo | Detalhes |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Tipo | Detalhes |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Tipo | Detalhes |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Peças alternativas
| MPN | Fabricante | Tipo alternativo | Embalagem | Disponibilidade | Preço unitário | ||
|---|---|---|---|---|---|---|---|
| GD25LB512MEYIGR | GigaDevice Semicon Beijing | Similares | WSON-8-EP(6x8) | 492 | $ 11.7124 |

