Broadcom AFBR-S4N66P014M

Broadcom AFBR-S4N66P014M is a single-channel Silicon Photomultiplier (SiPM) designed for ultra-sensitive, precise single-photon measurements. This SiPM is based on NUV-MT technology, which combines higher photon detection efficiency (PDE), lower dark count rate, and lower crosstalk compared to NUV-HD technology. The Single-Photon Avalanche Diode (SPAD) pitch is 40μm.

Larger area coverage can be achieved by tiling multiple AFBR-S4N66P014M SiPMs. Packaged in an epoxy clear molding compound with good mechanical stability and robustness, the encapsulant offers high transparency at UV wavelengths, broad response across the visible spectrum, and high sensitivity in the blue and near-UV regions of the spectrum. This SiPM is best suited for detecting low-level pulsed light sources, and is particularly well-suited for detecting Cherenkov light or scintillation light emitted by the most common organic (plastic) and inorganic scintillator materials (e.g., LSO, LYSO, BGO, NaI, CsI, BaF, LaBr₃, etc.). This product is lead-free and RoHS compliant.

• 63% high photon detection efficiency (PDE) at 420nm wavelength
• Four-side tileable with high fill factor
• Cell pitch: 40μm
• High-transparency epoxy protective coating
• Operating temperature range: -20°C ~ +60°C
• Excellent single photon time resolution (SPTR) and coincidence resolving time (CRT)
• Outstanding uniformity of breakdown voltage and gain across devices
• RoHS, CFM, and REACH compliant

• X-ray and gamma-ray detection
• Nuclear medicine
• Positron emission tomography
• Safety and security
• Physics experiments
• Cherenkov light detection