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TI SN74CB3Q3245RGYRRoHS

Manufacturer
MPN
SN74CB3Q3245RGYR
LCSC Part #
C201559
Packaging
VQFN-20-EP(3.5x4.5)
Customer #
Key Attributes
8-BIT FET BUS SWITCH
Datasheetpdf iconTI SN74CB3Q3245RGYR

Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Logic/Signal Switches, Multiplexers, Decoders
ManufacturerTI
PackagingVQFN-20-EP(3.5x4.5)
-3dB Bandwidth500MHz
Number of Channels8
Ron
Voltage - Supply2.3V~3.6V
Operating Temperature-40℃~+85℃
FeaturesBidirectional analog channel;Power-off isolation
Con11pF
Propagation Delay200ps

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The SN74CB3Q3245 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (rₒₙ). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3245 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems. The SN74CB3Q3245 is organized as an 8-bit bus switch with a single output-enable (OE̅) input. When OE̅ is low, the bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the bus switch is OFF and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Iₒff. The Iₒff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down, OE̅ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

Features

AI Translation
  • High-Bandwidth Data Path (up to 500 MHz)
  • Equivalent to IDTQS3VH384 Device
  • 5-V Tolerant I/Os With Device Powered Up or Powered Down
  • Low and Flat ON-State Resistance (rₒₙ = 4 Ω Typ) Characteristics Over Operating Range
  • Rail-to-Rail Switching on Data I/O Ports
  • -d- to 5-V Switching With 3.3-V VCC
  • -d- to 3.3-V Switching With 3.5-V VCC
  • Bidirectional Data Flow With Near-Zero Propagation Delay
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cᵢₒ(OFF) = 3.5 pF Typ)
  • Fast Switching Frequency (fₒₑ = 20 MHz Max)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (Icc = 1 mA Typical)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0- to 5-V Signaling Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
  • Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Iₒff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: PCI Interface, Differential Signal Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

Applications

AI Translation
  • broadband communications
  • networking
  • data-intensive computing systems
In-Stock: 864
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Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.0475$ 1.05
10+$ 0.8705$ 8.71
30+$ 0.7731$ 23.19
100+$ 0.6642$ 66.42
500+$ 0.6155$ 307.75
1,000+$ 0.5928$ 592.80
Standard Packaging3000/Full Reel
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