MCC SI2429DW-TP
| Manufacturer | |
| MPN | SI2429DW-TP |
| LCSC Part # | C19992067 |
| Packaging | SOT-363 |
| Customer # | |
| Key Attributes | 1.5A 450mW 260mΩ@1.8V 1.1V SOT-363 FET, MOSFET Arrays RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | MCC | |
| Packaging | SOT-363 | |
| Current - Continuous Drain(Id) | 1.5A | |
| Pd - Power Dissipation | 450mW | |
| RDS(on) | 260mΩ@1.8V | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Drain to Source Voltage | 20V | |
| Type | N-Channel + P-Channel | |
| Gate Charge(Qg) | 3nC@10V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | MCC | |
| Packaging | SOT-363 | |
| Current - Continuous Drain(Id) | 1.5A | |
| Pd - Power Dissipation | 450mW | |
| RDS(on) | 260mΩ@1.8V |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Drain to Source Voltage | 20V | |
| Type | N-Channel + P-Channel | |
| Gate Charge(Qg) | 3nC@10V | |
| Operating Temperature | -55℃~+150℃ |
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Features
AI Translation
- Low on-resistance RDS(on)
- Operable with low logic-level gate drive
- Epoxy meets UL 94 V-0 flammability rating
- Moisture sensitivity level 1
- Halogen-free, "green" device
- Lead-free finish / RoHS compliant (suffix "P" denotes RoHS compliance)
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.1459 | $ 0.15 |
| 10+ | $ 0.1167 | $ 1.17 |
| 30+ | $ 0.1022 | $ 3.07 |
| 100+ | $ 0.0912 | $ 9.12 |
| 500+ | $ 0.0825 | $ 41.25 |
| 1,000+ | $ 0.0781 | $ 78.10 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | MCC | |
| Packaging | SOT-363 | |
| Current - Continuous Drain(Id) | 1.5A | |
| Pd - Power Dissipation | 450mW | |
| RDS(on) | 260mΩ@1.8V | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Drain to Source Voltage | 20V | |
| Type | N-Channel + P-Channel | |
| Gate Charge(Qg) | 3nC@10V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | MCC | |
| Packaging | SOT-363 | |
| Current - Continuous Drain(Id) | 1.5A | |
| Pd - Power Dissipation | 450mW | |
| RDS(on) | 260mΩ@1.8V |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Drain to Source Voltage | 20V | |
| Type | N-Channel + P-Channel | |
| Gate Charge(Qg) | 3nC@10V | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Low on-resistance RDS(on)
- Operable with low logic-level gate drive
- Epoxy meets UL 94 V-0 flammability rating
- Moisture sensitivity level 1
- Halogen-free, "green" device
- Lead-free finish / RoHS compliant (suffix "P" denotes RoHS compliance)
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

