MCC MCACD20N10Y-TP
| Manufacturer | |
| MPN | MCACD20N10Y-TP |
| LCSC Part # | C19988006 |
| Packaging | - |
| Customer # | |
| Key Attributes | 20A 22mΩ@10V 31W 2.5V FET, MOSFET Arrays RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | MCC | |
| Packaging | - | |
| Current - Continuous Drain(Id) | 20A | |
| RDS(on) | 22mΩ@10V | |
| Pd - Power Dissipation | 31W | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Drain to Source Voltage | 100V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| Input Capacitance(Ciss) | 1.202nF | |
| Gate Charge(Qg) | 60nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 632pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | MCC | |
| Packaging | - | |
| Current - Continuous Drain(Id) | 20A | |
| RDS(on) | 22mΩ@10V | |
| Pd - Power Dissipation | 31W | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 100V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| Input Capacitance(Ciss) | 1.202nF | |
| Gate Charge(Qg) | 60nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 632pF |
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Features
AI Translation
- Split-gate trench MOSFET technology
- High-density cell design for low RDS(ON)
- High-speed switching
- Moisture Sensitivity Level 1
- Halogen-free "Green" device
- Epoxy meets UL 94 V-0 flammability rating
- Lead-free finish/RoHS compliant ("P" suffix denotes RoHS compliant)
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.832 | $ 0.83 |
| 10+ | $ 0.6771 | $ 6.77 |
| 30+ | $ 0.6012 | $ 18.04 |
| 100+ | $ 0.5237 | $ 52.37 |
| 500+ | $ 0.4788 | $ 239.40 |
| 1,000+ | $ 0.4555 | $ 455.50 |
Standard Packaging1/Full Bag | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | MCC | |
| Packaging | - | |
| Current - Continuous Drain(Id) | 20A | |
| RDS(on) | 22mΩ@10V | |
| Pd - Power Dissipation | 31W | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Drain to Source Voltage | 100V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| Input Capacitance(Ciss) | 1.202nF | |
| Gate Charge(Qg) | 60nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 632pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | MCC | |
| Packaging | - | |
| Current - Continuous Drain(Id) | 20A | |
| RDS(on) | 22mΩ@10V | |
| Pd - Power Dissipation | 31W | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 100V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| Input Capacitance(Ciss) | 1.202nF | |
| Gate Charge(Qg) | 60nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 632pF |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Split-gate trench MOSFET technology
- High-density cell design for low RDS(ON)
- High-speed switching
- Moisture Sensitivity Level 1
- Halogen-free "Green" device
- Epoxy meets UL 94 V-0 flammability rating
- Lead-free finish/RoHS compliant ("P" suffix denotes RoHS compliant)
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

