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DIODES DMN12M8UCA10-7 product image
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DIODES DMN12M8UCA10-7RoHS

Manufacturer
DIODES
MPN
DMN12M8UCA10-7
LCSC Part #
C19949301
Packaging
X4-DSN3015-10
Customer #
Key Attributes
25A 2.4mΩ@3.8V 2.75W 1.4V X4-DSN3015-10 FET, MOSFET Arrays RoHS
Datasheetpdf iconDIODES DMN12M8UCA10-7
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.6393$ 0.64
200+$ 0.2551$ 51.02
500+$ 0.2472$ 123.60
1,000+$ 0.2425$ 242.50
Standard Packaging5000/Full Bag
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerDIODES
PackagingX4-DSN3015-10
Current - Continuous Drain(Id)25A
RDS(on)2.4mΩ@3.8V
Pd - Power Dissipation2.75W
Gate Threshold Voltage (Vgs(th))1.4V
Drain to Source Voltage12V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)202pF
Input Capacitance(Ciss)2.504nF
Gate Charge(Qg)36.4nC@4V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)679pF
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Introduction

AI Translation

This next-generation MOSFET is designed to minimize on-resistance (R<sub>SS(ON)</sub>) while maintaining superior switching performance, making it ideal for high-efficiency power management applications.

Features

AI Translation
  • CSP package with dimensions of 2.98 mm × 1.49 mm
  • Low profile height of 0.11 mm
  • Gate ESD protection
  • Fully lead-free and fully RoHS compliant
  • Halogen- and antimony-free, "green" device

Applications

AI Translation
  • Battery Management - Load Switch - Battery Protection