Suzhou Good-Ark Elec GSFP08150
| Fabricante | Suzhou Good-Ark ElecAsian Brands |
| N.º de pieza fab. | GSFP08150 |
| Nº LCSC | C19841212 |
| Emb. | - |
| Número de Cliente | |
| Atrib. clave | 192W 80V 150A 3.6mΩ@10V 1 N-channel N-Channel Single FETs, MOSFETs RoHS |
| Hoja de Datos | Suzhou Good-Ark Elec GSFP08150 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Suzhou Good-Ark Elec | |
| Emb. | - | |
| Output Capacitance(Coss) | 990pF | |
| Ciss-Input Capacitance | 4.6nF | |
| Pd - Power Dissipation | 192W | |
| Drain to Source Voltage | 80V | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 150A | |
| Reverse Transfer Capacitance (Crss) | 24pF | |
| RDS(on) | 3.6mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 100nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Suzhou Good-Ark Elec | |
| Emb. | - | |
| Output Capacitance(Coss) | 990pF | |
| Ciss-Input Capacitance | 4.6nF | |
| Pd - Power Dissipation | 192W | |
| Drain to Source Voltage | 80V | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ |
| Tipo | Descripción | |
|---|---|---|
| Current - Continuous Drain(Id) | 150A | |
| Reverse Transfer Capacitance (Crss) | 24pF | |
| RDS(on) | 3.6mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 100nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
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Descripción
Traducción por IA
GSFP08150 employs the latest technology to achieve high cell density and low on-resistance. These characteristics make the device highly efficient and reliable in switching mode power supplies and a wide variety of other applications.
Características
Traducción por IA
- Advanced MOSFET process technology
- Ideal for high-efficiency switch-mode power supplies
- Low on-resistance, low gate charge
- Fast switching and reverse body recovery
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Suzhou Good-Ark Elec | |
| Emb. | - | |
| Output Capacitance(Coss) | 990pF | |
| Ciss-Input Capacitance | 4.6nF | |
| Pd - Power Dissipation | 192W | |
| Drain to Source Voltage | 80V | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 150A | |
| Reverse Transfer Capacitance (Crss) | 24pF | |
| RDS(on) | 3.6mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 100nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Suzhou Good-Ark Elec | |
| Emb. | - | |
| Output Capacitance(Coss) | 990pF | |
| Ciss-Input Capacitance | 4.6nF | |
| Pd - Power Dissipation | 192W | |
| Drain to Source Voltage | 80V | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ |
| Tipo | Descripción | |
|---|---|---|
| Current - Continuous Drain(Id) | 150A | |
| Reverse Transfer Capacitance (Crss) | 24pF | |
| RDS(on) | 3.6mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 100nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
GSFP08150 employs the latest technology to achieve high cell density and low on-resistance. These characteristics make the device highly efficient and reliable in switching mode power supplies and a wide variety of other applications.
Características
Traducción por IA
- Advanced MOSFET process technology
- Ideal for high-efficiency switch-mode power supplies
- Low on-resistance, low gate charge
- Fast switching and reverse body recovery
C19841212 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

