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Suzhou Good-Ark Elec GSFP08150

Fabricante
N.º de pieza fab.
GSFP08150
Nº LCSC
C19841212
Emb.
-
Número de Cliente
Atrib. clave
192W 80V 150A 3.6mΩ@10V 1 N-channel N-Channel Single FETs, MOSFETs RoHS
Hoja de DatosSuzhou Good-Ark Elec GSFP08150
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días

Especificaciones del Producto

Todo
TipoDescripción
CategoríaDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
FabricanteSuzhou Good-Ark Elec
Emb.-
Output Capacitance(Coss)990pF
Ciss-Input Capacitance4.6nF
Pd - Power Dissipation192W
Drain to Source Voltage80V
Configuration-
Operating Temperature-55℃~+150℃
Current - Continuous Drain(Id)150A
Reverse Transfer Capacitance (Crss)24pF
RDS(on)3.6mΩ@10V
Number1 N-channel
Gate Charge(Qg)100nC@10V
Vgs±20V
TypeN-Channel
Gate Threshold Voltage (Vgs(th))4V

Descripción

Traducción por IA

GSFP08150 employs the latest technology to achieve high cell density and low on-resistance. These characteristics make the device highly efficient and reliable in switching mode power supplies and a wide variety of other applications.

Características

Traducción por IA
  • Advanced MOSFET process technology
  • Ideal for high-efficiency switch-mode power supplies
  • Low on-resistance, low gate charge
  • Fast switching and reverse body recovery