Suzhou Good-Ark Elec GSFD0650
| Manufacturer | Suzhou Good-Ark ElecAsian Brands |
| MPN | GSFD0650 |
| LCSC Part # | C19841164 |
| Packaging | TO-252(DPAK) |
| Customer # | |
| Key Attributes | 53W 65V 50A 8.8mΩ@10V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS |
| Datasheet | Suzhou Good-Ark Elec GSFD0650 |
| Alternative Parts | 3 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Suzhou Good-Ark Elec | |
| Packaging | TO-252(DPAK) | |
| Output Capacitance(Coss) | 480pF | |
| Ciss-Input Capacitance | 1.21nF | |
| Pd - Power Dissipation | 53W | |
| Configuration | - | |
| Drain to Source Voltage | 65V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 50A | |
| Reverse Transfer Capacitance (Crss) | 35pF | |
| RDS(on) | 8.8mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 25nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Suzhou Good-Ark Elec | |
| Packaging | TO-252(DPAK) | |
| Output Capacitance(Coss) | 480pF | |
| Ciss-Input Capacitance | 1.21nF | |
| Pd - Power Dissipation | 53W | |
| Configuration | - | |
| Drain to Source Voltage | 65V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 50A | |
| Reverse Transfer Capacitance (Crss) | 35pF | |
| RDS(on) | 8.8mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 25nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The GSFD0650 achieves high cell density and low on-resistance using the latest technology. These characteristics make the device highly efficient and reliable in high-efficiency switching mode power supplies and a wide variety of other applications.
Features
AI Translation
- Advanced MOSFET process technology
- Ideal for high-efficiency switch-mode power supplies
- Low on-resistance and low gate charge
- Fast switching and reverse body recovery
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100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Suzhou Good-Ark Elec | |
| Packaging | TO-252(DPAK) | |
| Output Capacitance(Coss) | 480pF | |
| Ciss-Input Capacitance | 1.21nF | |
| Pd - Power Dissipation | 53W | |
| Configuration | - | |
| Drain to Source Voltage | 65V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 50A | |
| Reverse Transfer Capacitance (Crss) | 35pF | |
| RDS(on) | 8.8mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 25nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Suzhou Good-Ark Elec | |
| Packaging | TO-252(DPAK) | |
| Output Capacitance(Coss) | 480pF | |
| Ciss-Input Capacitance | 1.21nF | |
| Pd - Power Dissipation | 53W | |
| Configuration | - | |
| Drain to Source Voltage | 65V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 50A | |
| Reverse Transfer Capacitance (Crss) | 35pF | |
| RDS(on) | 8.8mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 25nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The GSFD0650 achieves high cell density and low on-resistance using the latest technology. These characteristics make the device highly efficient and reliable in high-efficiency switching mode power supplies and a wide variety of other applications.
Features
AI Translation
- Advanced MOSFET process technology
- Ideal for high-efficiency switch-mode power supplies
- Low on-resistance and low gate charge
- Fast switching and reverse body recovery
C19841164 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

