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ABLIC S-85V1AB17-I6T1U product image
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ABLIC S-85V1AB17-I6T1URoHS

Manufacturer
ABLIC
MPN
S-85V1AB17-I6T1U
LCSC Part #
C19761380
Packaging
SNT-6A
Customer #
Key Attributes
1MHz Step-down type SNT-6A Voltage Regulators - DC DC Switching Regulators RoHS
Datasheetpdf iconABLIC S-85V1AB17-I6T1U
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1+$ 1.6155$ 1.62
200+$ 0.645$ 129.00
500+$ 0.6237$ 311.85
1,000+$ 0.6131$ 613.10
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Voltage Regulators - DC DC Switching Regulators
ManufacturerABLIC
PackagingSNT-6A
Operating Temperature-40℃~+85℃
Number of Outputs1
Frequency - Switching1MHz
FunctionStep-down type
FeaturesLight load efficient mode;Overcurrent Protection;Hiccup current limiting
TopologyBuck
Output Type-
Operating Voltage2.2V~5.5V
Switch tube (built-in/external)-
Output Current-
Output Voltage-
Quiescent Current-
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Introduction

AI Translation

The S-85V1A Series is a step-down switching regulator which features high efficiency and fast transient response. Since PWM / PFM switching control automatically switches to PFM control when under light load, high efficiency is realized. This IC is suitable for mobile devices and battery powered devices due to introduction of own distinctive COT (Constant On-Time) control. Also, high-density mounting is realized by adopting super-small, thin SNT-6A package. Therefore, the occupancy area including a coil, an input capacitor and an output capacitor can be reduced to 2.0 mm × 4.5 mm = 9.0 mm² and it contributes to miniaturization of electronic equipment.

Features

AI Translation
  • Current consumption: 10 μA quiescent current
  • Efficiency: 93%
  • Fast transient response: COT control
  • Input voltage: 2.2 V to 5.5 V
  • Output voltage: 0.7 V to 2.5 V in 0.05 V step, 2.6 V to 3.9 V in 0.1 V step
  • Output voltage accuracy: ±1.5% (1.0 V ≤ VOUT ≤ 3.9 V), ±15 mV (0.7 V ≤ VOUT < 1.0 V)
  • Switching frequency: 1.0 MHz (at PWM operation)
  • High side power MOS FET on-resistance: 450 mΩ
  • Low side power MOS FET on-resistance: 350 mΩ
  • Soft-start function: 1 ms typ.
  • Under voltage lockout function (UVLO): 1.8 V typ. (detection voltage)
  • Thermal shutdown function: 135 °C typ. (detection temperature)
  • Overcurrent protection function: 450 mA (at L = 2.2 μH)
  • Automatic recovery type short-circuit protection function: Hiccup control
  • Input and output capacitors: Ceramic capacitor compatible
  • Operation temperature range: Ta = -40 °C to +85 °C
  • Lead-free (Sn 100%), halogen-free

Applications

AI Translation
  • Bluetooth device
  • Wireless sensor network device
  • Healthcare equipment
  • Smart meter
  • Portable game device
  • Remote control