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HUAKE HCD65R360

Manufacturer
HUAKEAsian Brands
MPN
HCD65R360
LCSC Part #
C19725800
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 650V 11A TO-252
DatasheetHUAKE HCD65R360
RoHS Compliance1 documents available
Alternative Parts2
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 2,397
2,397 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.6119$ 0.5202$ 0.52
10+$ 0.5647$ 0.4800$ 4.80
30+$ 0.5403$ 0.4593$ 13.78
100+$ 0.5159$ 0.4386$ 43.86
500+$ 0.3678$ 0.3127$ 156.35
1,000+$ 0.3597$ 0.3058$ 305.80
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHUAKE
PackagingTO-252
Drain to Source Voltage650V
Output Capacitance(Coss)270pF
Current - Continuous Drain(Id)11A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation91W
RDS(on)400mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)40pF
Number1 N-channel
Input Capacitance(Ciss)615pF
Gate Charge(Qg)23.1nC@10V
TypeN-Channel

Features

AI Translation
  • 11.0A, 650V, RDS(on)(Typ) =340mΩ@VGS=10V
  • Low Gate Charge
  • Low Crss
  • 100% Avalanche Tested
  • Fast Switching
  • Improved dv/dt Capability

Applications

AI Translation
  • High Frequency Switching Mode Power Supply Active Power Factor Correction

Alternative Parts

MPNManufacturerPackagingAvailabilityUnit Price
HCD65R260HUAKETO-2526$ 0.9276
HCD65R280-S2HUAKETO-2524,849$ 0.62