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EDA-ModelleEasyEDA
micron M58LT128KSB8ZA6F
| Hersteller | |
| Herst.-Teilenr. | M58LT128KSB8ZA6F |
| LCSC-Nr. | C19383289 |
| Verp. | BGA-64(10x13) |
| Kundennummer | |
| Hauptmerkm. | 128Mbit 1.7V~2V 52MHz Parallel BGA-64(10x13) Memory RoHS |
| Datenblatt | micron M58LT128KSB8ZA6F |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | micron | |
| Verp. | BGA-64(10x13) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | - | |
| Memory Size | 128Mbit | |
| Voltage - Supply | 1.7V~2V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 52MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Page Programming Time (Tpp) | - | |
| Write Cycle Time(tWC) | 85ns | |
| Interface | Parallel | |
| Standby Supply Current | 50uA |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | micron | |
| Verp. | BGA-64(10x13) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | - | |
| Memory Size | 128Mbit | |
| Voltage - Supply | 1.7V~2V | |
| Program / Erase Cycles | 100,000 cycles |
| Typ | Beschreibung | |
|---|---|---|
| Clock Frequency | 52MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Page Programming Time (Tpp) | - | |
| Write Cycle Time(tWC) | 85ns | |
| Interface | Parallel | |
| Standby Supply Current | 50uA |
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Merkmale
KI-Übersetzung
- Supply voltage: VDD = 1.7 V to 2.0 V for Program, Erase and Read; VDDQ = 2.7 V to 3.6 V for I/O buffers; VPP = 9 V for fast program
- Synchronous/Asynchronous Read: Synchronous Burst Read mode: 52 MHz; Asynchronous Page Read mode; Random access: 85 ns, 70 ns
- Programming time: 2.5 μs typical word program time using Buffer Enhanced Factory Program command
- Memory organization: Multiple bank memory array: 8-Mbit banks; Parameter blocks (top or bottom location)
- Dual operations: program/erase in one bank while read in others; No delay between Read and Write operations
- Block protection: All blocks protected at power-up; Any combination of blocks can be protected with zero latency; Absolute write protection with VPP = VSS
- Security: Software security features; 64-bit unique device number; 2112-bit user programmable OTP Cells
- Common flash interface (CFI): 100 000 program/erase cycles per block
- TBGA64 (ZA) 10 x 13 mm
- Electronic signature: Manufacturer code: 20h; Top device codes: M58LT128KST: 88D6h; Bottom device codes: M58LT128KSB: 88D7h
- TBGA64 package RoHS compliant available
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
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Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 12.8172 | $ 12.82 |
| 200+ | $ 5.1145 | $ 1022.90 |
| 500+ | $ 4.943 | $ 2471.50 |
| 1,000+ | $ 4.8596 | $ 4859.60 |
Standardgehäuse2500/Full Bag | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | micron | |
| Verp. | BGA-64(10x13) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | - | |
| Memory Size | 128Mbit | |
| Voltage - Supply | 1.7V~2V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 52MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Page Programming Time (Tpp) | - | |
| Write Cycle Time(tWC) | 85ns | |
| Interface | Parallel | |
| Standby Supply Current | 50uA |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | micron | |
| Verp. | BGA-64(10x13) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | - | |
| Memory Size | 128Mbit | |
| Voltage - Supply | 1.7V~2V | |
| Program / Erase Cycles | 100,000 cycles |
| Typ | Beschreibung | |
|---|---|---|
| Clock Frequency | 52MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Page Programming Time (Tpp) | - | |
| Write Cycle Time(tWC) | 85ns | |
| Interface | Parallel | |
| Standby Supply Current | 50uA |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Supply voltage: VDD = 1.7 V to 2.0 V for Program, Erase and Read; VDDQ = 2.7 V to 3.6 V for I/O buffers; VPP = 9 V for fast program
- Synchronous/Asynchronous Read: Synchronous Burst Read mode: 52 MHz; Asynchronous Page Read mode; Random access: 85 ns, 70 ns
- Programming time: 2.5 μs typical word program time using Buffer Enhanced Factory Program command
- Memory organization: Multiple bank memory array: 8-Mbit banks; Parameter blocks (top or bottom location)
- Dual operations: program/erase in one bank while read in others; No delay between Read and Write operations
- Block protection: All blocks protected at power-up; Any combination of blocks can be protected with zero latency; Absolute write protection with VPP = VSS
- Security: Software security features; 64-bit unique device number; 2112-bit user programmable OTP Cells
- Common flash interface (CFI): 100 000 program/erase cycles per block
- TBGA64 (ZA) 10 x 13 mm
- Electronic signature: Manufacturer code: 20h; Top device codes: M58LT128KST: 88D6h; Bottom device codes: M58LT128KSB: 88D7h
- TBGA64 package RoHS compliant available
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Typ | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| M58LT128KST7ZA6F | micron | Ähnliche | BGA-64(10x13) | 0 | $ 12.8172 | ||
| M58LT128KST8ZA6F | micron | Ähnliche | BGA-64(10x13) | 0 | $ 12.8172 | ||
| PC28F128P30BF65B TR | micron | Ähnliche | EASYBGA-64(10x13) | 0 | $ 4.7124 | ||
| M58LT128KSB7ZA6F | micron | Ähnliche | BGA-64(10x13) | 0 | $ 12.8172 | ||
| PC28F128P30TF65B TR | micron | Ähnliche | EASYBGA-64(10x13) | 0 | $ 11.0026 |