micron JS28F128J3F75H
| Manufacturer | |
| MPN | JS28F128J3F75H |
| LCSC Part # | C19344447 |
| Packaging | TSOP-56 |
| Customer # | |
| Key Attributes | 128Mbit 2.7V~3.6V Parallel TSOP-56 Memory RoHS |
| Datasheet | micron JS28F128J3F75H |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | TSOP-56 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Absolute write protection;Hardware write protection;Power-on reset | |
| Memory Size | 128Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | - | |
| Data Retention - TDR (Year) | - | |
| Block Erase Time(tBE) | 4s@(128KB) | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 2ms | |
| Interface | Parallel | |
| Standby Supply Current | 120uA |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | TSOP-56 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Absolute write protection;Hardware write protection;Power-on reset | |
| Memory Size | 128Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles |
| Type | Description | |
|---|---|---|
| Clock Frequency | - | |
| Data Retention - TDR (Year) | - | |
| Block Erase Time(tBE) | 4s@(128KB) | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 2ms | |
| Interface | Parallel | |
| Standby Supply Current | 120uA |
Introduction
The J3 65 nm SBC device provides improved mainstream performance with enhanced security features, taking advantage of the high quality and reliability of the NOR-based 65 nm technology. Offered in 128-Mbit, 64-Mbit, and 32-Mbit densities, the J3 65 nm SBC device brings reliable, low-voltage capability (3 V read, program, and erase) with high speed, low-power operation. The J3 65 nm SBC device takes advantage of proven manufacturing experience and is ideal for code and data applications where high density and low cost are required, such as in networking, telecommunications, digital set top boxes, audio recording, and digital imaging. Numonyx Flash Memory components also deliver a new generation of forward-compatible software support. By using the Common Flash Interface (CFI) and Scalable Command Set (SCS), customers can take advantage of density upgrades and optimized write capabilities of future Numonyx Flash Memory devices.
Features
- Architecture — Symmetrical 128-KB blocks — 128 Mbit (128 blocks) — 64 Mbit (64 blocks) — 32 Mbit (32 blocks) — Blank Check to verify an erased block
- Performance — Initial Access Speed: 75ns — 25 ns 8-word Asynchronous page-mode reads — 256-Word write buffer for x16 mode, 256-Byte write buffer for x8 mode; 1.41 µs per Byte Effective programming time
- System Voltage — VCC = 2.7 V to 3.6 V — VCCQ = 2.7 V to 3.6 V
- Packaging — 56-Lead TSOP — 64-Ball Easy BGA package
- Security — Enhanced security options for code protection — Absolute protection with VPEN = Vss — Individual block locking Block erase/program lockout during power transitions — Password Access feature — One-Time Programmable Register: 64 OTP bits, programmed with unique information by Numonyx 64 OTP bits, available for customer programming
- Software — Program and erase suspend support — Flash Data Integrator (FDI) — Common Flash Interface (CFI) Compatible — Scalable Command Set
- Quality and Reliability — Operating temperature: -40 ℃ to +85 ℃ — 100K Minimum erase cycles per block — 65 nm Flash Technology — JESD47E Compliant
Applications
- networking
- telecommunications
- digital set top boxes
- audio recording
- digital imaging
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 16.2005 | $ 16.20 |
| 192+ | $ 6.4647 | $ 1241.22 |
| 480+ | $ 6.2493 | $ 2999.66 |
| 960+ | $ 6.1416 | $ 5895.94 |
Standard Packaging96/Full Bag | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | TSOP-56 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Absolute write protection;Hardware write protection;Power-on reset | |
| Memory Size | 128Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | - | |
| Data Retention - TDR (Year) | - | |
| Block Erase Time(tBE) | 4s@(128KB) | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 2ms | |
| Interface | Parallel | |
| Standby Supply Current | 120uA |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | TSOP-56 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Absolute write protection;Hardware write protection;Power-on reset | |
| Memory Size | 128Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles |
| Type | Description | |
|---|---|---|
| Clock Frequency | - | |
| Data Retention - TDR (Year) | - | |
| Block Erase Time(tBE) | 4s@(128KB) | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 2ms | |
| Interface | Parallel | |
| Standby Supply Current | 120uA |
Introduction
The J3 65 nm SBC device provides improved mainstream performance with enhanced security features, taking advantage of the high quality and reliability of the NOR-based 65 nm technology. Offered in 128-Mbit, 64-Mbit, and 32-Mbit densities, the J3 65 nm SBC device brings reliable, low-voltage capability (3 V read, program, and erase) with high speed, low-power operation. The J3 65 nm SBC device takes advantage of proven manufacturing experience and is ideal for code and data applications where high density and low cost are required, such as in networking, telecommunications, digital set top boxes, audio recording, and digital imaging. Numonyx Flash Memory components also deliver a new generation of forward-compatible software support. By using the Common Flash Interface (CFI) and Scalable Command Set (SCS), customers can take advantage of density upgrades and optimized write capabilities of future Numonyx Flash Memory devices.
Features
- Architecture — Symmetrical 128-KB blocks — 128 Mbit (128 blocks) — 64 Mbit (64 blocks) — 32 Mbit (32 blocks) — Blank Check to verify an erased block
- Performance — Initial Access Speed: 75ns — 25 ns 8-word Asynchronous page-mode reads — 256-Word write buffer for x16 mode, 256-Byte write buffer for x8 mode; 1.41 µs per Byte Effective programming time
- System Voltage — VCC = 2.7 V to 3.6 V — VCCQ = 2.7 V to 3.6 V
- Packaging — 56-Lead TSOP — 64-Ball Easy BGA package
- Security — Enhanced security options for code protection — Absolute protection with VPEN = Vss — Individual block locking Block erase/program lockout during power transitions — Password Access feature — One-Time Programmable Register: 64 OTP bits, programmed with unique information by Numonyx 64 OTP bits, available for customer programming
- Software — Program and erase suspend support — Flash Data Integrator (FDI) — Common Flash Interface (CFI) Compatible — Scalable Command Set
- Quality and Reliability — Operating temperature: -40 ℃ to +85 ℃ — 100K Minimum erase cycles per block — 65 nm Flash Technology — JESD47E Compliant
Applications
- networking
- telecommunications
- digital set top boxes
- audio recording
- digital imaging
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |