micron M58WR064KT7AZB6E

Manufacturer	micron
MPN	M58WR064KT7AZB6E
LCSC Part #	C19322245
Packaging	VFBGA-56(7.7x9)
Customer #
Key Attributes	1.7V~2V 64Mbit 66MHz Parallel VFBGA-56(7.7x9) Memory (ICs) RoHS
Datasheet	micron M58WR064KT7AZB6E

Products Specifications

Type	Description	All
Category	Integrated Circuits (ICs)/Memory/Memory (ICs)
Manufacturer	micron
Packaging	VFBGA-56(7.7x9)
Voltage - Supply	1.7V~2V
Memory Size	64Mbit
Operating temperature	-40℃~+85℃
Clock Frequency	66MHz
Interface	Parallel

AI Translation

Supply Voltage:
- VDD = 1.7V to 2V for program, erase, and read
- VDDQ = 1.7V to 2V for I/O buffers
- VPP = 9V for fast program
Synchronous/Asynchronous Read:
- Synchronous burst read mode: 66MHz
- Asynchronous/synchronous page read mode
- Random access time: 70ns
Synchronous burst read suspend
Program Time:
- Typical single-word program time 10μs for fast factory program
- Double/quadruple word program option
- Enhanced factory program option
Memory Blocks:
- Multiple-bank memory array: 4Mb bank
- Parameter blocks (top or bottom location)
Dual Operation:
- Read from one bank while program/erase another bank
- No latency between read and write operations
Block Locking:
- All blocks locked at power-up
- Any combination of blocks can be locked
- Block locking with WP#
Security:
- 128-bit user-programmable OTP cell
- 64-bit unique device number
Common Flash Interface (CFI):
- 100,000 program/erase cycles per block
- Electronic Signature:
  - Manufacturer Code: 20h
  - Device Code: M58WR032KT (top): 8814h; M58WR032KB (bottom): 8815h; M58WR064KT (top): 8810h; M58WR064KB (bottom): 8811h
RoHS-compliant packages available
Automotive-qualified parts available

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