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AGMSEMI AGM30P55D
| Manufacturer | AGMSEMIAsian Brands |
| MPN | AGM30P55D |
| LCSC Part # | C19193070 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET 30V 65A TO-252 |
| Datasheet | AGMSEMI AGM30P55D |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 460pF | |
| Current - Continuous Drain(Id) | 65A | |
| Ciss-Input Capacitance | 3.05nF | |
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss) | 240pF | |
| RDS(on) | 5mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 28nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Type | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 460pF | |
| Current - Continuous Drain(Id) | 65A | |
| Ciss-Input Capacitance | 3.05nF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss) | 240pF | |
| RDS(on) | 5mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 28nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Type | - |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
AGM30P55D combines advanced trench MOSFET technology with a low-resistance package to deliver ultra-low RDS(ON). The device is ideal for load switching and battery protection applications.
Features
AI Translation
- Advanced high cell density trench technology
- Low RDS(ON) to minimize conduction losses
- Low gate charge for fast switching
- Low thermal resistance
- 100% avalanche tested
- 100% DVDS tested
Applications
AI Translation
- MB/VGA Vcore
- Synchronous rectifier for switching power supply secondary side
- Point-of-load (POL) applications
- Brushless DC (BLDC) motor driver
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 85
85 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.3199 | $ 1.60 |
| 50+ | $ 0.2544 | $ 12.72 |
| 150+ | $ 0.2264 | $ 33.96 |
| 500+ | $ 0.1914 | $ 95.70 |
| 2,500+ | $ 0.1719 | $ 429.75 |
| 5,000+ | $ 0.1625 | $ 812.50 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 460pF | |
| Current - Continuous Drain(Id) | 65A | |
| Ciss-Input Capacitance | 3.05nF | |
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss) | 240pF | |
| RDS(on) | 5mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 28nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Type | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 460pF | |
| Current - Continuous Drain(Id) | 65A | |
| Ciss-Input Capacitance | 3.05nF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss) | 240pF | |
| RDS(on) | 5mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 28nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Type | - |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
AGM30P55D combines advanced trench MOSFET technology with a low-resistance package to deliver ultra-low RDS(ON). The device is ideal for load switching and battery protection applications.
Features
AI Translation
- Advanced high cell density trench technology
- Low RDS(ON) to minimize conduction losses
- Low gate charge for fast switching
- Low thermal resistance
- 100% avalanche tested
- 100% DVDS tested
Applications
AI Translation
- MB/VGA Vcore
- Synchronous rectifier for switching power supply secondary side
- Point-of-load (POL) applications
- Brushless DC (BLDC) motor driver
C19193070 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| AGM30P05D | AGMSEMI | Similar | TO-252 | 25 | $ 0.2691 | ||
| AGM30P08D | AGMSEMI | Similar | TO-252 | 100 | $ 0.2513 | ||
| AGM40P75D | AGMSEMI | Similar | TO-252 | 18 | $0.3828 $0.4029 | ||
| AGM60P90D | AGMSEMI | Similar | TO-252 | 6,071 | $0.6074 $0.6602 | ||
| AGM40P100D | AGMSEMI | Similar | TO-252 | 40 | $ 0.5176 |