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VBsemi Elec FDD8874-VBRoHS

Manufacturer
VBsemi ElecAsian Brands
MPN
FDD8874-VB
LCSC Part #
C18794999
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 30V 100A TO-252
Datasheetpdf iconVBsemi Elec FDD8874-VB
In-Stock: 45
45 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.6008$ 0.5107$ 0.51
10+$ 0.4884$ 0.4152$ 4.15
30+$ 0.4321$ 0.3673$ 11.02
100+$ 0.3775$ 0.3209$ 32.09
500+$ 0.3438$ 0.2923$ 146.15
1,000+$ 0.3261$ 0.2772$ 277.20
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVBsemi Elec
PackagingTO-252
Drain to Source Voltage30V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation235W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)3mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)-
Gate Charge(Qg)103nC@4.5V
TypeN-Channel

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Features

AI Translation
  • Trench power MOSFET
  • 100% Rg and UIS tested
  • Compliant with EU RoHS Directive 2011/65/EU

Applications

AI Translation
  • OR gate
  • Server
  • DC/DC