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VBsemi Elec SI7403BDN-T1-GE3-VB product image
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VBsemi Elec SI7403BDN-T1-GE3-VB

Produttore
VBsemi ElecAsian Brands
Cod. Prod.
SI7403BDN-T1-GE3-VB
Cod. LCSC
C18794993
Imballo
DFN3x3-8
Numero Cliente
Attr. chiave
MOSFET P-CH 12V 25A DFN3x3-8
Scheda TecnicaVBsemi Elec SI7403BDN-T1-GE3-VB
Parti alternative5
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Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ProduttoreVBsemi Elec
ImballoDFN3x3-8
Operating Temperature-55℃~+150℃
Drain to Source Voltage12V
Output Capacitance(Coss)865pF
Current - Continuous Drain(Id)25A
Ciss-Input Capacitance2.22nF
Pd - Power Dissipation37W
Reverse Transfer Capacitance (Crss)555pF
RDS(on)23mΩ@1.8V
Number1 P-Channel
Gate Charge(Qg)35nC@4.5V
Gate Threshold Voltage (Vgs(th))1.5V
TypeP-Channel
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Caratteristiche

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  • Halogen-free according to IEC 61249-2-21 Definition
  • TrenchFET Power MOSFET Ultra Small DFN3x3 Chipscale Packaging Reduces Footprint Area, Profile (0.62 mm) and On-Resistance Per Footprint Area
  • Compliant to RoHS Directive 2002/95/EC

Applicazioni

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  • PA Switch
  • Battery Switch
  • Load Switch