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MICROCHIP 25LC1024-I/P product image
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MICROCHIP 25LC1024-I/P

Manufacturer
MPN
25LC1024-I/P
LCSC Part #
C185524
Packaging
PDIP-8
Customer #
Key Attributes
1 Mbit SPI Bus Serial EEPROM
Datasheetpdf iconMICROCHIP 25LC1024-I/P
RoHS Compliance1 documents available
Alternative Parts2
Out of Stock
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QtyUnit Price(Reference Only)Total Amount
1+$ 8.6463$ 8.65
10+$ 8.4834$ 84.83
30+$ 8.3748$ 251.24
100+$ 8.2662$ 826.62
Standard Packaging60/Full Tube
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
ManufacturerMICROCHIP
PackagingPDIP-8
Operating Temperature-40℃~+85℃
FeaturesHardware write protection function;Built-in write enable latch (WEL);Power-down/Power-up protection circuit
Memory Size1Mbit
Voltage - Supply2.5V~5.5V
Clock Frequency20MHz
Access Time-
Data Retention - TDR (Year)200 Years
Current - Supply10mA
Write Cycle Time(tWC)6ms
Standby Supply Current20uA
Write Cycle Endurance1,000,000 cycles
InterfaceSPI

Introduction

AI Translation

The 25LC1024 is a 1024 Kbit serial EEPROM memory with byte-level and page-level serial EEPROM functions. It also features Page, Sector and Chip erase functions typically associated with Flash-based products. These functions are not required for byte or page write operations. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled by a Chip Select (CS) input. Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts. The 25LC1024 is available in standard packages including 8-lead PDIP and SOIJ, and advanced 8-lead DFN package. All devices are Pb-free.

Features

AI Translation
  • 20 MHz max. Clock Speed
  • Byte and Page-level Write Operations:
    • 256 byte page
    • 6 ms max. write cycle time
    • No page or sector erase required
  • Low-Power CMOS Technology:
    • Max. Write current: 5 mA at 5.5V, 20 MHz
    • Read current: 7 mA at 5.5V, 20 MHz
    • Standby current: 1 μA at 2.5V (Deep power-down)
  • Electronic Signature for Device ID
  • Self-Timed Erase and Write Cycles:
    • Page Erase (6 ms max.)
    • Sector Erase (10 ms max.)
    • Chip Erase (10 ms max.)
  • Sector Write Protection (32K byte/sector):
    • Protect none, 1/4, 1/2 or all of array
  • Built-In Write Protection:
    • Power-on/off data protection circuitry
    • Write enable latch
    • Write-protect pin
  • High Reliability:
    • Endurance: 1M erase/write cycles
    • Data Retention: > 200 years
    • ESD Protection: > 4000 V
  • Temperature Ranges Supported:
    • Industrial (I): -40℃ to +85℃
    • Automotive (E): -40℃ to +125℃
  • Pb-Free and RoHS Compliant

Alternative Parts

MPNManufacturerPackagingAvailabilityUnit Price
25AA1024-I/PMICROCHIPPDIP-85$3.0722 $9.9103
25LC1024-E/PMICROCHIPPDIP-80$ 9.6671