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JSMSEMI IRS2106STRPBF-JSM product image
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JSMSEMI IRS2106STRPBF-JSMRoHS

Manufacturer
JSMSEMIAsian Brands
MPN
IRS2106STRPBF-JSM
LCSC Part #
C18194980
Packaging
SOP-8
Customer #
Key Attributes
700V integrated BSD single-phase in-phase high-side and low-side gate driver IC
Datasheetpdf iconJSMSEMI IRS2106STRPBF-JSM
In-Stock: 441
441 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.5249$ 0.52
10+$ 0.4212$ 4.21
30+$ 0.3702$ 11.11
100+$ 0.3191$ 31.91
500+$ 0.2952$ 147.60
1,000+$ 0.2793$ 279.30
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
ManufacturerJSMSEMI
PackagingSOP-8
Input Logic Level - Low-
Low Level Delay Time-
High Level Delay Time-
Quiescent Current120uA
Input Logic Level - High-
Operating Temperature-40℃~+125℃
Voltage - Supply10V~20V
Driven ConfigurationHigh Side;Low Side
Current - Output Low(IOL)600mA
Rise Time75ns
Fall Time35ns
Current - Output High(IOH)300mA
FeaturesUnder Voltage Protection;Built-in bootstrap diode;Interleaved conduction protection;Dead-time control
Load TypeMOSFET

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

IRS2106S is a high-voltage, high-speed power MOSFET high and low side driver chip. It has independent high-side and low-side reference output channels. IRS2106S uses a high and low voltage compatible process, enabling the high and low side gate drive circuits to be integrated on a single chip. The logic input level is compatible with CMOS or LSTTL logic output levels as low as 3.3V. Its floating channel can be used to drive high-side N-channel power MOSFETs, with a maximum floating ground channel operating voltage of up to 700V. IRS2106S is available in an SOP-8 package and can operate in the temperature range of -40℃ to 125℃.

Features

AI Translation
  • Integrated bootstrap diode
  • Maximum operating voltage of +700V
  • Compatible with 3.3V, 5V, and 15V input logic
  • dVs/dt tolerance of up to ±50 V/ns
  • Vs negative bias capability of -9V
  • Integrated VCC, VBS undervoltage lockout circuit
    • Undervoltage lockout forward threshold: 8.9V
    • Undervoltage lockout reverse threshold: 8.2V
  • Chip transmission delay characteristics
    • Turn-on/turn-off transmission delay Ton/Toff = 130ns/130ns
    • Delay matching time: 50ns
  • Shoot-through protection
    • Dead time: 100ns
  • Wide temperature range of -40℃ to 125℃
  • Output stage sink/source current capability of 300mA/600mA
  • Complies with RoHS standards
  • SOIC8 (S)

Applications

AI Translation
  • Motor control
  • Industrial automation
  • General inverters
  • Power conversion
  • PWM control systems
  • Resonant circuit drives