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JSMSEMI IRF7828TRPBF-JSM product image
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JSMSEMI IRF7828TRPBF-JSMRoHS

Manufacturer
JSMSEMIAsian Brands
MPN
IRF7828TRPBF-JSM
LCSC Part #
C18194662
Packaging
SOP-8
Customer #
Key Attributes
MOSFET N-CH 30V 15A SOP-8
Datasheetpdf iconJSMSEMI IRF7828TRPBF-JSM
In-Stock: 90
90 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2343$ 0.2109$ 1.05
50+$ 0.1856$ 0.1671$ 8.36
150+$ 0.1647$ 0.1483$ 22.25
500+$ 0.1387$ 0.1249$ 62.45
2,500+$ 0.1271$ 0.1144$ 286.00
4,000+$ 0.1201$ 0.1081$ 432.40
Standard Packaging4000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerJSMSEMI
PackagingSOP-8
Drain to Source Voltage30V
Output Capacitance(Coss)325pF
Current - Continuous Drain(Id)15A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)185pF
RDS(on)18mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.47nF
Gate Charge(Qg)20.8nC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging4000
Sales UnitPiece

Introduction

AI Translation

The IRF7828TRPBF is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology. This high density process is especially tailored to minimize on-state resistance. This device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous buck converter applications

Features

AI Translation
  • 30V/15A, RDS(ON) = 8.5mΩ (typ.) @v0s = 10V
  • 30V/11A, RDS(ON) = 14mΩ (typ.) @v0.5 = 4.5V
  • Super high design for extremely low Rps(on)
  • Exceptional on-resistance and Maximum DC current capability
  • Full RoHS compliance
  • SOP8 package design

Applications

AI Translation
  • High Frequency Point-of-Load Synchronous
  • Newworking DC-DC Power System
  • Load Switch