JSMSEMI KIA2301-JSM
| Manufacturer | JSMSEMIAsian Brands |
| MPN | KIA2301-JSM |
| LCSC Part # | C18194632 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | 20V 4.2A 1.5W 40mΩ@4.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS |
| Datasheet | JSMSEMI KIA2301-JSM |
| RoHS Compliance | 6 documents available |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 167pF | |
| Current - Continuous Drain(Id) | 4.2A | |
| Ciss-Input Capacitance | 989pF | |
| Pd - Power Dissipation | 1.5W | |
| Reverse Transfer Capacitance (Crss) | 75.5pF | |
| RDS(on) | 40mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 11.1nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 167pF | |
| Current - Continuous Drain(Id) | 4.2A | |
| Ciss-Input Capacitance | 989pF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.5W | |
| Reverse Transfer Capacitance (Crss) | 75.5pF | |
| RDS(on) | 40mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 11.1nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
Introduction
KIA2301 is a P-channel logic enhancement mode power MOSFET fabricated using advanced trench technology with high cell density. This high-density process is specifically designed to minimize on-resistance. These devices are particularly suitable for low-voltage applications where low in-line power dissipation is required in surface mount packages with very small footprints.
Features
- -20V / -4.3A, RDS(ON) = 30mΩ (typ.) @VGS = -4.5V
- -20V / -3.5A, RDS(ON) = 40mΩ (typ.) @VGS = -2.5V
- -20V / -2.0A, RDS(ON) = 56mΩ (typ.) @VGS = -1.8V
- -20V / -1.0A, RDS(ON) = 85mΩ (typ.) @VGS = -1.5V
- Ultra-high design optimized for extremely low \mathsfRDS(ON)
- Excellent on-resistance and maximum DC current capability
- Fully RoHS compliant
- SOT23-3 package
- P-channel
Applications
- Power Management - Portable Devices - DC/DC Converters - Load Switches - Digital Cameras - LCD Display Inverters
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.072 | $ 0.07 |
| 200+ | $ 0.0288 | $ 5.76 |
| 500+ | $ 0.0278 | $ 13.90 |
| 1,000+ | $ 0.0273 | $ 27.30 |
Standard Packaging3000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 167pF | |
| Current - Continuous Drain(Id) | 4.2A | |
| Ciss-Input Capacitance | 989pF | |
| Pd - Power Dissipation | 1.5W | |
| Reverse Transfer Capacitance (Crss) | 75.5pF | |
| RDS(on) | 40mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 11.1nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 167pF | |
| Current - Continuous Drain(Id) | 4.2A | |
| Ciss-Input Capacitance | 989pF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.5W | |
| Reverse Transfer Capacitance (Crss) | 75.5pF | |
| RDS(on) | 40mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 11.1nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
Introduction
KIA2301 is a P-channel logic enhancement mode power MOSFET fabricated using advanced trench technology with high cell density. This high-density process is specifically designed to minimize on-resistance. These devices are particularly suitable for low-voltage applications where low in-line power dissipation is required in surface mount packages with very small footprints.
Features
- -20V / -4.3A, RDS(ON) = 30mΩ (typ.) @VGS = -4.5V
- -20V / -3.5A, RDS(ON) = 40mΩ (typ.) @VGS = -2.5V
- -20V / -2.0A, RDS(ON) = 56mΩ (typ.) @VGS = -1.8V
- -20V / -1.0A, RDS(ON) = 85mΩ (typ.) @VGS = -1.5V
- Ultra-high design optimized for extremely low \mathsfRDS(ON)
- Excellent on-resistance and maximum DC current capability
- Fully RoHS compliant
- SOT23-3 package
- P-channel
Applications
- Power Management - Portable Devices - DC/DC Converters - Load Switches - Digital Cameras - LCD Display Inverters
C18194632 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| WPM2026-JSM | JSMSEMI | Similar | SOT-23 | 2,910 | $ 0.0673 | ||
| PMV65XP,215-JSM | JSMSEMI | Similar | SOT-23-3L | 2,960 | $ 0.0763 | ||
| PMV65XPEAR-JSM | JSMSEMI | Similar | SOT-23-3 | 2,990 | $ 0.0716 | ||
| SI2333DS-T1-GE3 | JSMSEMI | Similar | SOT23-3 | 10 | $0.0710 $0.0747 | ||
| IRLML2244TRPBF-JSM | JSMSEMI | Similar | SOT-23-3 | 310 | $0.0692 $0.0728 |

