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JSMSEMI RFD3055LESM9A-JSM
| Manufacturer | JSMSEMIAsian Brands |
| MPN | RFD3055LESM9A-JSM |
| LCSC Part # | C18193265 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | 60V 20A 31W 36mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS |
| Datasheet | JSMSEMI RFD3055LESM9A-JSM |
| RoHS Compliance | 6 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 1.15nF | |
| Pd - Power Dissipation | 31W | |
| Reverse Transfer Capacitance (Crss) | 45.3pF | |
| RDS(on) | 36mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 20.3nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 1.15nF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 31W | |
| Reverse Transfer Capacitance (Crss) | 45.3pF | |
| RDS(on) | 36mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 20.3nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
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Introduction
AI Translation
This N-channel MOSFET utilizes advanced trench technology and design to deliver excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Drain-Source Voltage (VDS) = 60V, Drain Current (ID) = 20A, On-Resistance (RDS(ON)) < 36mΩ at VGS = 10V
- Low gate charge.
- RoHS-compliant devices available.
- Advanced high cell density trench technology for ultra-low RDS(ON).
- Excellent package with superior thermal dissipation performance.
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.307 | $ 0.31 |
| 200+ | $ 0.1225 | $ 24.50 |
| 500+ | $ 0.1184 | $ 59.20 |
| 1,000+ | $ 0.1164 | $ 116.40 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 1.15nF | |
| Pd - Power Dissipation | 31W | |
| Reverse Transfer Capacitance (Crss) | 45.3pF | |
| RDS(on) | 36mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 20.3nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 1.15nF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 31W | |
| Reverse Transfer Capacitance (Crss) | 45.3pF | |
| RDS(on) | 36mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 20.3nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET utilizes advanced trench technology and design to deliver excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Drain-Source Voltage (VDS) = 60V, Drain Current (ID) = 20A, On-Resistance (RDS(ON)) < 36mΩ at VGS = 10V
- Low gate charge.
- RoHS-compliant devices available.
- Advanced high cell density trench technology for ultra-low RDS(ON).
- Excellent package with superior thermal dissipation performance.
C18193265 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| 2SK2018-JSM | JSMSEMI | Similar | TO-252 | 2,500 | $ 0.2674 | ||
| EMB60N06A-JSM | JSMSEMI | Similar | TO-252 | 2,470 | $ 0.2674 | ||
| NTD3055-094G-JSM | JSMSEMI | Similar | TO-252 | 2,490 | $ 0.288 | ||
| MLD1N06CLT4G-JSM | JSMSEMI | Similar | TO-252 | 2,000 | $0.1685 $0.1773 | ||
| CJU4828-JSM | JSMSEMI | Similar | TO-252 | 1,685 | $ 0.2674 |