Zdjęcia poglądowe
Modele EDAEasyEDA
JSMSEMI MI3471-JSM
| Producent | JSMSEMIAsian Brands |
| Nr części prod. | MI3471-JSM |
| Nr LCSC | C18193231 |
| Opak. | SOT-23 |
| Numer Klienta | |
| Klucz. cechy | 30V 4.3A 1.2V 1.5W 78mΩ@2.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS |
| Karta Katalogowa | JSMSEMI MI3471-JSM |
| Zgodność z RoHS | 6 dokumentów dostępnych |
| Części alternatywne | 20 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | JSMSEMI | |
| Opak. | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | - | |
| Output Capacitance(Coss) | 280pF | |
| Current - Continuous Drain(Id) | 4.3A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Pd - Power Dissipation | 1.5W | |
| RDS(on) | 78mΩ@2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 102pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 672pF | |
| Gate Charge(Qg) | 6.2nC@4.5V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | JSMSEMI | |
| Opak. | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | - | |
| Output Capacitance(Coss) | 280pF | |
| Current - Continuous Drain(Id) | 4.3A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 1.5W | |
| RDS(on) | 78mΩ@2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 102pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 672pF | |
| Gate Charge(Qg) | 6.2nC@4.5V | |
| Type | P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
P-channel logic-level enhancement-mode power MOSFETs fabricated using advanced high cell density trench technology. This high-density process is specifically designed to minimize on-resistance. These devices are particularly suitable for low-voltage applications requiring low inline power dissipation in ultra-compact SMT packages.
Funkcje
Tłumaczenie AI
- -30V/-4.3A, RDS(ON) = 44mΩ (typical) @ VGS = -10V
- -30V/-3.5A, RDS(ON) = 50mΩ (typical) @ VGS = -4.5V
- -30V/-2.5A, RDS(ON) = 65mΩ (typical) @ VGS = -2.5V
- Ultra-high design optimized for extremely low RDS(ON)
- Excellent on-resistance and maximum DC current capability
- Fully RoHS compliant
- SOT23-3 package
Zastosowania
Tłumaczenie AI
- Power Management
- Portable Devices
- DC/DC Converters
- Load Switches
- Digital Cameras
- LCD Monitor Inverters
Brak w magazynie
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 0.1068 | $ 0.11 |
| 200+ | $ 0.0426 | $ 8.52 |
| 500+ | $ 0.0412 | $ 20.60 |
| 1,000+ | $ 0.0405 | $ 40.50 |
Standardowa Obudowa3000/Full Reel | ||
Lepsza cena za większą ilość?
$
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | JSMSEMI | |
| Opak. | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | - | |
| Output Capacitance(Coss) | 280pF | |
| Current - Continuous Drain(Id) | 4.3A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Pd - Power Dissipation | 1.5W | |
| RDS(on) | 78mΩ@2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 102pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 672pF | |
| Gate Charge(Qg) | 6.2nC@4.5V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | JSMSEMI | |
| Opak. | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | - | |
| Output Capacitance(Coss) | 280pF | |
| Current - Continuous Drain(Id) | 4.3A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 1.5W | |
| RDS(on) | 78mΩ@2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 102pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 672pF | |
| Gate Charge(Qg) | 6.2nC@4.5V | |
| Type | P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
P-channel logic-level enhancement-mode power MOSFETs fabricated using advanced high cell density trench technology. This high-density process is specifically designed to minimize on-resistance. These devices are particularly suitable for low-voltage applications requiring low inline power dissipation in ultra-compact SMT packages.
Funkcje
Tłumaczenie AI
- -30V/-4.3A, RDS(ON) = 44mΩ (typical) @ VGS = -10V
- -30V/-3.5A, RDS(ON) = 50mΩ (typical) @ VGS = -4.5V
- -30V/-2.5A, RDS(ON) = 65mΩ (typical) @ VGS = -2.5V
- Ultra-high design optimized for extremely low RDS(ON)
- Excellent on-resistance and maximum DC current capability
- Fully RoHS compliant
- SOT23-3 package
Zastosowania
Tłumaczenie AI
- Power Management
- Portable Devices
- DC/DC Converters
- Load Switches
- Digital Cameras
- LCD Monitor Inverters
C18193231 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| AO3401A-JSM | JSMSEMI | SOT-23 | 2,980 | $ 0.0376 | ||
| SI2319CDS-T1-GE3-JSM | JSMSEMI | SOT-23 | 660 | $0.0483 $0.0508 | ||
| AM2305PE-JSM | JSMSEMI | SOT-23 | 0 | $ 0.085 | ||
| AM2319P-T1-JSM | JSMSEMI | SOT-23 | 0 | $ 0.085 | ||
| AM2339P-T1-JSM | JSMSEMI | SOT-23 | 0 | $ 0.0836 | ||
| AM3401E3VR-JSM | JSMSEMI | SOT-23 | 0 | $ 0.085 | ||
| AO3421E-JSM | JSMSEMI | SOT-23 | 0 | $ 0.085 | ||
| AP2303GN-JSM | JSMSEMI | SOT-23 | 0 | $ 0.085 | ||
| AP2305AGN-JSM | JSMSEMI | SOT-23 | 0 | $ 0.085 | ||
| AP2309AGN-JSM | JSMSEMI | SOT-23 | 0 | $ 0.085 | ||
| AP2309GN-JSM | JSMSEMI | SOT-23 | 0 | $ 0.085 | ||
| AP2321GN-JSM | JSMSEMI | SOT-23 | 0 | $ 0.085 | ||
| APM2305AC-JSM | JSMSEMI | SOT-23 | 0 | $ 0.085 | ||
| APM2309AC-JSM | JSMSEMI | SOT-23 | 0 | $ 0.085 | ||
| CES2331-JSM | JSMSEMI | SOT-23-3 | 0 | $ 0.085 | ||
| CJ2333-JSM | JSMSEMI | SOT-23 | 0 | $ 0.085 | ||
| DMG2307L-JSM | JSMSEMI | SOT-23 | 0 | $ 0.0929 | ||
| GE3401-JSM | JSMSEMI | SOT-23 | 0 | $ 0.0929 | ||
| NTR4502PT1G-JSM | JSMSEMI | SOT-23 | 0 | $ 0.0929 | ||
| P5103EMG-JSM | JSMSEMI | SOT-23 | 0 | $ 0.1161 |