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JSMSEMI 4813NHG-JSM
| Manufacturer | JSMSEMIAsian Brands |
| MPN | 4813NHG-JSM |
| LCSC Part # | C18193022 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | 30V 55A 37.5W 10mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS |
| Datasheet | JSMSEMI 4813NHG-JSM |
| RoHS Compliance | 6 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 131pF | |
| Current - Continuous Drain(Id) | 55A | |
| Ciss-Input Capacitance | 940pF | |
| Pd - Power Dissipation | 37.5W | |
| Reverse Transfer Capacitance (Crss) | 109pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 9.8nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 131pF | |
| Current - Continuous Drain(Id) | 55A | |
| Ciss-Input Capacitance | 940pF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 37.5W | |
| Reverse Transfer Capacitance (Crss) | 109pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 9.8nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
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Introduction
AI Translation
This N-channel MOSFET utilizes advanced trench technology and design to deliver excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Drain-Source Voltage (VDS) = 30V, Drain Current (ID) = 55A, On-State Resistance (RDS(ON)) < 10mΩ at Gate-Source Voltage (VGS) = 10V
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- Excellent package thermal dissipation performance
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.3307 | $ 0.33 |
| 200+ | $ 0.132 | $ 26.40 |
| 500+ | $ 0.1276 | $ 63.80 |
| 1,000+ | $ 0.1254 | $ 125.40 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 131pF | |
| Current - Continuous Drain(Id) | 55A | |
| Ciss-Input Capacitance | 940pF | |
| Pd - Power Dissipation | 37.5W | |
| Reverse Transfer Capacitance (Crss) | 109pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 9.8nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 131pF | |
| Current - Continuous Drain(Id) | 55A | |
| Ciss-Input Capacitance | 940pF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 37.5W | |
| Reverse Transfer Capacitance (Crss) | 109pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 9.8nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET utilizes advanced trench technology and design to deliver excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Drain-Source Voltage (VDS) = 30V, Drain Current (ID) = 55A, On-State Resistance (RDS(ON)) < 10mΩ at Gate-Source Voltage (VGS) = 10V
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- Excellent package thermal dissipation performance
C18193022 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| P2003BDG-JSM | JSMSEMI | Similar | TO-252 | 1,540 | $ 0.2702 | ||
| AOD4186-JSM | JSMSEMI | Similar | TO-252 | 2,400 | $ 0.3702 | ||
| AOD4112-JSM | JSMSEMI | Similar | TO-252 | 0 | $ 0.3307 | ||
| AOD422-JSM | JSMSEMI | Similar | TO-252 | 0 | $ 0.3307 | ||
| FDD8782-JSM | JSMSEMI | Similar | TO-252 | 0 | $ 0.3307 |