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JSMSEMI NTD3055-094G-JSMRoHS

Manufacturer
JSMSEMIAsian Brands
MPN
NTD3055-094G-JSM
LCSC Part #
C18192078
Packaging
TO-252
Customer #
Key Attributes
60V 20A 3V 31W 45mΩ@4.5V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS
Datasheetpdf iconJSMSEMI NTD3055-094G-JSM
In-Stock: 2,500
2,500 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2809$ 1.40
50+$ 0.2225$ 11.13
150+$ 0.1975$ 29.63
500+$ 0.1663$ 83.15
2,500+$ 0.1524$ 381.00
5,000+$ 0.1441$ 720.50
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerJSMSEMI
PackagingTO-252
Drain to Source Voltage60V
Output Capacitance(Coss)55pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation31W
RDS(on)45mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)45.3pF
Number1 N-channel
Input Capacitance(Ciss)1.15nF
Gate Charge(Qg)20.3nC@10V
TypeN-Channel

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET employs advanced trench technology and design to deliver excellent on-resistance RDS(on) with low gate charge, making it suitable for a wide range of applications.

Features

AI Translation
  • Drain-source voltage VDS = 60V, drain current ID = 20A, on-resistance RDS(ON) < 36mΩ at VGS = 10V
  • Low gate charge
  • RoHS-compliant devices available
  • Advanced high cell density trench technology for ultra-low RDS(ON)
  • Excellent package thermal dissipation performance

Applications

AI Translation
  • Power Management - Portable Devices - DC/DC Converters - Load Switches - Digital Cameras - LCD Display Inverters