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JSMSEMI DMN2009LSS-13-JSM product image
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JSMSEMI DMN2009LSS-13-JSMRoHS

Manufacturer
JSMSEMIAsian Brands
MPN
DMN2009LSS-13-JSM
LCSC Part #
C18191907
Packaging
SOP-8
Customer #
Key Attributes
MOSFET N-CH 30V 15A SOP-8
Datasheetpdf iconJSMSEMI DMN2009LSS-13-JSM
In-Stock: 1,985
1,985 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.231$ 1.16
50+$ 0.203$ 10.15
150+$ 0.191$ 28.65
500+$ 0.1761$ 88.05
2,500+$ 0.1694$ 423.50
4,000+$ 0.1654$ 661.60
Standard Packaging4000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerJSMSEMI
PackagingSOP-8
Drain to Source Voltage30V
Output Capacitance(Coss)325pF
Current - Continuous Drain(Id)15A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3W
RDS(on)18mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)185pF
Number1 N-channel
Input Capacitance(Ciss)986pF
Gate Charge(Qg)20.8nC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging4000
Sales UnitPiece

Introduction

AI Translation

The DMN2009LSS is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology. This high density process is especially tailored to minimize on-state resistance. This device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous buck converter applications

Features

AI Translation
  • 30V/15A, RDS(ON) = 6.5 mΩ (typ.) @ VGS = 10V
  • 30V/11A, RDS(ON) = 10 mΩ (typ.) @ VGS = 4.5V
  • Super high design for extremely low RDS(ON)
  • Exceptional on-resistance and Maximum DC current capability
  • Full RoHS compliance
  • SOP8 package design

Applications

AI Translation
  • High Frequency Point-of-Load Synchronous Newworking DC-DC Power System
  • Load Switch