JSMSEMI QM2409K-JSM
| Manufacturer | JSMSEMIAsian Brands |
| MPN | QM2409K-JSM |
| LCSC Part # | C18191229 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | 20V 4.2A 1.5W 110mΩ@1.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS |
| Datasheet | JSMSEMI QM2409K-JSM |
| RoHS Compliance | 6 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | - | |
| Output Capacitance(Coss) | 167pF | |
| Current - Continuous Drain(Id) | 4.2A | |
| Ciss-Input Capacitance | 989pF | |
| Pd - Power Dissipation | 1.5W | |
| Reverse Transfer Capacitance (Crss) | 75.5pF | |
| RDS(on) | 110mΩ@1.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 11.1nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | - | |
| Output Capacitance(Coss) | 167pF | |
| Current - Continuous Drain(Id) | 4.2A | |
| Ciss-Input Capacitance | 989pF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.5W | |
| Reverse Transfer Capacitance (Crss) | 75.5pF | |
| RDS(on) | 110mΩ@1.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 11.1nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
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Introduction
AI Translation
QM2409K is a P-channel logic-level enhancement mode power MOSFET fabricated using advanced high cell density trench technology. This high-density process is specifically optimized to reduce on-resistance. These devices are particularly suitable for low-voltage applications requiring low in-circuit power dissipation in ultra-compact SMT packages.
Features
AI Translation
- -20V / -4.3A, RDS(ON) = 30mΩ (typ.) @VGS = -4.5V
- -20V / -3.5A, RDS(ON) = 40mΩ (typ.) @VGS = -2.5V
- -20V / -2.0A, RDS(ON) = 56mΩ (typ.) @VGS = -1.8V
- -20V / -1.0A, RDS(ON) = 85mΩ (typ.) @VGS = -1.5V
- Optimized for ultra-low RDS(ON)
- Excellent on-resistance and maximum DC current capability
- Fully RoHS compliant
- SOT23-3 package
- P-channel
Applications
AI Translation
- Power Management - Portable Devices - DC/DC Converters - Load Switches - Digital Cameras - LCD Display Inverters
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.0929 | $ 0.09 |
| 200+ | $ 0.0371 | $ 7.42 |
| 500+ | $ 0.0359 | $ 17.95 |
| 1,000+ | $ 0.0352 | $ 35.20 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | - | |
| Output Capacitance(Coss) | 167pF | |
| Current - Continuous Drain(Id) | 4.2A | |
| Ciss-Input Capacitance | 989pF | |
| Pd - Power Dissipation | 1.5W | |
| Reverse Transfer Capacitance (Crss) | 75.5pF | |
| RDS(on) | 110mΩ@1.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 11.1nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | - | |
| Output Capacitance(Coss) | 167pF | |
| Current - Continuous Drain(Id) | 4.2A | |
| Ciss-Input Capacitance | 989pF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.5W | |
| Reverse Transfer Capacitance (Crss) | 75.5pF | |
| RDS(on) | 110mΩ@1.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 11.1nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
QM2409K is a P-channel logic-level enhancement mode power MOSFET fabricated using advanced high cell density trench technology. This high-density process is specifically optimized to reduce on-resistance. These devices are particularly suitable for low-voltage applications requiring low in-circuit power dissipation in ultra-compact SMT packages.
Features
AI Translation
- -20V / -4.3A, RDS(ON) = 30mΩ (typ.) @VGS = -4.5V
- -20V / -3.5A, RDS(ON) = 40mΩ (typ.) @VGS = -2.5V
- -20V / -2.0A, RDS(ON) = 56mΩ (typ.) @VGS = -1.8V
- -20V / -1.0A, RDS(ON) = 85mΩ (typ.) @VGS = -1.5V
- Optimized for ultra-low RDS(ON)
- Excellent on-resistance and maximum DC current capability
- Fully RoHS compliant
- SOT23-3 package
- P-channel
Applications
AI Translation
- Power Management - Portable Devices - DC/DC Converters - Load Switches - Digital Cameras - LCD Display Inverters
C18191229 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| AO3415A-JSM | JSMSEMI | Similar | SOT-23-3 | 1,550 | $0.0393 $0.0441 | ||
| IRLML2244TRPBF-JSM | JSMSEMI | Similar | SOT-23-3 | 310 | $0.0692 $0.0728 | ||
| IRLML6401GTRPBF-JSM | JSMSEMI | Similar | SOT-23 | 2,950 | $ 0.0788 | ||
| IRLML6402TRPBF-JSM | JSMSEMI | Similar | SOT-23 | 14,200 | $0.0386 $0.0406 | ||
| PMV48XP,215-JSM | JSMSEMI | Similar | SOT-23 | 1,920 | $ 0.0732 |

