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JSMSEMI FQD30N06-JSM
| Manufacturer | JSMSEMIAsian Brands |
| MPN | FQD30N06-JSM |
| LCSC Part # | C18190770 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | 60V 30A 40W 40mΩ@4.5V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS |
| Datasheet | JSMSEMI FQD30N06-JSM |
| RoHS Compliance | 6 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 90pF | |
| Current - Continuous Drain(Id) | 30A | |
| Ciss-Input Capacitance | 1.7nF | |
| Pd - Power Dissipation | 40W | |
| Reverse Transfer Capacitance (Crss) | 65pF | |
| RDS(on) | 40mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 20nC@30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 90pF | |
| Current - Continuous Drain(Id) | 30A |
| Type | Description | |
|---|---|---|
| Ciss-Input Capacitance | 1.7nF | |
| Pd - Power Dissipation | 40W | |
| Reverse Transfer Capacitance (Crss) | 65pF | |
| RDS(on) | 40mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 20nC@30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
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Introduction
AI Translation
This N-channel MOSFET utilizes advanced trench technology and design to achieve excellent on-resistance (RDS(on)) at low gate charge, making it suitable for a wide range of applications.
Features
AI Translation
- Drain-source voltage (VDS) = 60V, drain current (ID) = 30A, on-resistance (RDS(ON)) < 30mΩ at gate-source voltage (VGS) = 10V
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- Excellent package thermal dissipation performance
Applications
AI Translation
- High-frequency point-of-load synchronization
- Networked DC-DC power systems
- Load switching
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.425 | $ 0.43 |
| 200+ | $ 0.1696 | $ 33.92 |
| 500+ | $ 0.164 | $ 82.00 |
| 1,000+ | $ 0.1612 | $ 161.20 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 90pF | |
| Current - Continuous Drain(Id) | 30A | |
| Ciss-Input Capacitance | 1.7nF | |
| Pd - Power Dissipation | 40W | |
| Reverse Transfer Capacitance (Crss) | 65pF | |
| RDS(on) | 40mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 20nC@30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 90pF | |
| Current - Continuous Drain(Id) | 30A |
| Type | Description | |
|---|---|---|
| Ciss-Input Capacitance | 1.7nF | |
| Pd - Power Dissipation | 40W | |
| Reverse Transfer Capacitance (Crss) | 65pF | |
| RDS(on) | 40mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 20nC@30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET utilizes advanced trench technology and design to achieve excellent on-resistance (RDS(on)) at low gate charge, making it suitable for a wide range of applications.
Features
AI Translation
- Drain-source voltage (VDS) = 60V, drain current (ID) = 30A, on-resistance (RDS(ON)) < 30mΩ at gate-source voltage (VGS) = 10V
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- Excellent package thermal dissipation performance
Applications
AI Translation
- High-frequency point-of-load synchronization
- Networked DC-DC power systems
- Load switching
C18190770 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| 20N06L-JSM | JSMSEMI | Similar | TO-252 | 0 | $ 0.3777 | ||
| FQD20N06-JSM | JSMSEMI | Similar | TO-252 | 0 | $ 0.425 | ||
| AOD442-JSM | JSMSEMI | Similar | TO-252 | 0 | $ 0.425 | ||
| 25N06L-TN3-JSM | JSMSEMI | Similar | TO-252 | 0 | $ 0.425 | ||
| 2SK3385-JSM | JSMSEMI | Similar | TO-252 | 0 | $ 0.3777 |