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JSMSEMI APM2315AC-JSM
| Producent | JSMSEMIAsian Brands |
| Nr części prod. | APM2315AC-JSM |
| Nr LCSC | C18190470 |
| Opak. | SOT-23L |
| Numer Klienta | |
| Klucz. cechy | 30V 5.6A 1.4W 50mΩ@10V 1 P-Channel P-Channel SOT-23L Single FETs, MOSFETs RoHS |
| Karta Katalogowa | JSMSEMI APM2315AC-JSM |
| Zgodność z RoHS | 6 dokumentów dostępnych |
| Części alternatywne | 2 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | JSMSEMI | |
| Opak. | SOT-23L | |
| Operating Temperature | - | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 5.6A | |
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 50mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | - | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | JSMSEMI | |
| Opak. | SOT-23L | |
| Operating Temperature | - | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 5.6A |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 50mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | - | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
2315 is a P-channel logic-level enhancement mode power MOSFET fabricated using advanced trench technology with high cell density, achieving excellent RDS(ON). The device is suitable for use as a load switch, or for PWM and gate charge applications in most synchronous buck converter designs.
Funkcje
Tłumaczenie AI
- -30V/-5.6A, RDS(ON) = 37mΩ (typical), VGS = -10V
- -30V/-4.3A, RDS(ON) = 52mΩ (typical), VGS = -4.5V
- Ultra-high cell density design for extremely low \mathsfRDS(ON)
- Excellent on-resistance and maximum DC current capability
- Fully RoHS compliant
- SOT23-3L package
- P-channel
Zastosowania
Tłumaczenie AI
- High-frequency point-of-load synchronous applications
- Step-down converters for MB/NB/UMPC/VGA
- DC/DC converters
- Load switches
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Brak w magazynie
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Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
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| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 0.085 | $ 0.09 |
| 200+ | $ 0.0339 | $ 6.78 |
| 500+ | $ 0.0328 | $ 16.40 |
| 1,000+ | $ 0.0323 | $ 32.30 |
Standardowa Obudowa3000/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | JSMSEMI | |
| Opak. | SOT-23L | |
| Operating Temperature | - | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 5.6A | |
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 50mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | - | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | JSMSEMI | |
| Opak. | SOT-23L | |
| Operating Temperature | - | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 5.6A |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 50mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | - | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
2315 is a P-channel logic-level enhancement mode power MOSFET fabricated using advanced trench technology with high cell density, achieving excellent RDS(ON). The device is suitable for use as a load switch, or for PWM and gate charge applications in most synchronous buck converter designs.
Funkcje
Tłumaczenie AI
- -30V/-5.6A, RDS(ON) = 37mΩ (typical), VGS = -10V
- -30V/-4.3A, RDS(ON) = 52mΩ (typical), VGS = -4.5V
- Ultra-high cell density design for extremely low \mathsfRDS(ON)
- Excellent on-resistance and maximum DC current capability
- Fully RoHS compliant
- SOT23-3L package
- P-channel
Zastosowania
Tłumaczenie AI
- High-frequency point-of-load synchronous applications
- Step-down converters for MB/NB/UMPC/VGA
- DC/DC converters
- Load switches
C18190470 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |