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JSMSEMI AO3415A-JSMRoHS

Manufacturer
JSMSEMIAsian Brands
MPN
AO3415A-JSM
LCSC Part #
C18190309
Packaging
SOT-23-3
Customer #
Key Attributes
MOSFET P-CH 20V 4.2A SOT-23-3
Datasheetpdf iconJSMSEMI AO3415A-JSM
In-Stock: 180
180 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
10+$ 0.0372$ 0.37
100+$ 0.0293$ 2.93
300+$ 0.0254$ 7.62
3,000+$ 0.0229$ 68.70
6,000+$ 0.0206$ 123.60
9,000+$ 0.0194$ 174.60
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerJSMSEMI
PackagingSOT-23-3
Drain to Source Voltage20V
Output Capacitance(Coss)167pF
Current - Continuous Drain(Id)4.2A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)75.5pF
RDS(on)110mΩ@1.5V
Number1 P-Channel
Input Capacitance(Ciss)989pF
Gate Charge(Qg)11.1nC@4.5V
TypeP-Channel

Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The 3415 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package.

Features

AI Translation
  • -20V/-4.3A, RDs(oN)=30mΩ (typ.)@VGs=-4.5V
  • -20V/-3.5A, RDs(0N)=40mΩ (typ.)@Vgs=-2.5V
  • -20V/-2.0A, RDs(0N)=56mΩ (typ.)@VGs=-1.8V
  • -20V/-1.0A, RDs(0N)=85mΩ (typ.)@VGs=-1.5V
  • Super high design for extremely low RDs(ON)
  • Exceptional on-resistance and Maximum DC current capability
  • Full RoHS compliance
  • SOT23-3 package design

Applications

AI Translation
  • Power Management
  • Portable Equipment
  • DC/DC Converter
  • Load Switch
  • DSC
  • LCD Display inverter