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GOODWORK IRF640RoHS

Manufacturer
GOODWORKAsian Brands
MPN
IRF640
LCSC Part #
C17702911
Packaging
TO-220-3L
Customer #
Key Attributes
MOSFET N-CH 200V 18A TO-220-3L
Datasheetpdf iconGOODWORK IRF640
In-Stock: 88
88 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.3505$ 0.35
10+$ 0.2737$ 2.74
50+$ 0.2506$ 12.53
100+$ 0.2091$ 20.91
500+$ 0.1906$ 95.30
1,000+$ 0.1799$ 179.90
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerGOODWORK
PackagingTO-220-3L
Configuration-
Drain to Source Voltage200V
Output Capacitance(Coss)400pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)180mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.3nF
Gate Charge(Qg)-
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

Third Generation HEXFETs from internation Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance cost effectiveness. The TO-220-3L package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 -3L contribute to its wide acceptance throughout the industry.

Features

AI Translation
  • Repetitive Avalanche Rated
  • Fast Switching
  • Ease of Paralleling
  • Simple Drive Requirement

Applications

AI Translation
  • Battery Protection - Load Switch - Uninterruptible Power Supply