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DIODES DMN3061SVT-13 product image
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DIODES DMN3061SVT-13RoHS

Manufacturer
DIODES
MPN
DMN3061SVT-13
LCSC Part #
C17664216
Packaging
TSOT-26
Customer #
Key Attributes
3.4A 200mΩ@3.3V 1.08W 1.8V 2 N-Channel TSOT-26 FET, MOSFET Arrays RoHS
Datasheetpdf iconDIODES DMN3061SVT-13
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.2729$ 0.27
200+$ 0.1089$ 21.78
500+$ 0.1053$ 52.65
1,000+$ 0.1035$ 103.50
Standard Packaging10000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerDIODES
PackagingTSOT-26
Current - Continuous Drain(Id)3.4A
RDS(on)200mΩ@3.3V
Pd - Power Dissipation1.08W
Gate Threshold Voltage (Vgs(th))1.8V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)29pF
Number2 N-Channel
Input Capacitance(Ciss)278pF
Gate Charge(Qg)6.6nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)44pF
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Introduction

AI Translation

This next-generation MOSFET is meticulously engineered to minimize on-resistance R<sub>DS(ON)</sub> while maintaining superior switching performance, making it ideal for high-efficiency power management applications.

Features

AI Translation
  • Low on-resistance
  • Compact SMT package
  • Lead-free terminal plating; RoHS compliant
  • Halogen-free

Applications

AI Translation
  • Backlight Lighting - DC-DC Converter - Power Management Function