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VISHAY SQJ992EP-T1_GE3 product image
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VISHAY SQJ992EP-T1_GE3RoHS

Manufacturer
MPN
SQJ992EP-T1_GE3
LCSC Part #
C17643333
Packaging
-
Customer #
Key Attributes
15A 11W 74.5mΩ@4.5V 2.5V 2 N-Channel FET, MOSFET Arrays RoHS
Datasheetpdf iconVISHAY SQJ992EP-T1_GE3
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.8286$ 0.83
200+$ 0.3315$ 66.30
500+$ 0.3192$ 159.60
1,000+$ 0.3146$ 314.60
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerVISHAY
Packaging-
Current - Continuous Drain(Id)15A
Pd - Power Dissipation11W
RDS(on)74.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)33pF
Number2 N-Channel
Input Capacitance(Ciss)446pF
Gate Charge(Qg)12nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)83pF

Features

AI Translation
  • TrenchFET® Power MOSFET
  • AEC-Q101 Qualified
  • 100% Tested for Rg and UIS
  • RoHS Compliant and Halogen-Free
  • N-Channel MOSFET

Applications

AI Translation
  • Zero-current-switching resonant mode