VISHAY SQJ992EP-T1_GE3
| Manufacturer | |
| MPN | SQJ992EP-T1_GE3 |
| LCSC Part # | C17643333 |
| Packaging | - |
| Customer # | |
| Key Attributes | 15A 11W 74.5mΩ@4.5V 2.5V 2 N-Channel FET, MOSFET Arrays RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | - | |
| Current - Continuous Drain(Id) | 15A | |
| Pd - Power Dissipation | 11W | |
| RDS(on) | 74.5mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 446pF | |
| Gate Charge(Qg) | 12nC@10V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 83pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | - | |
| Current - Continuous Drain(Id) | 15A | |
| Pd - Power Dissipation | 11W | |
| RDS(on) | 74.5mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Drain to Source Voltage | 60V |
| Type | Description | |
|---|---|---|
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 446pF | |
| Gate Charge(Qg) | 12nC@10V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 83pF |
Report an ErrorShow similar products (0) >
Features
AI Translation
- TrenchFET® Power MOSFET
- AEC-Q101 Qualified
- 100% Tested for Rg and UIS
- RoHS Compliant and Halogen-Free
- N-Channel MOSFET
Applications
AI Translation
- Zero-current-switching resonant mode
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.8286 | $ 0.83 |
| 200+ | $ 0.3315 | $ 66.30 |
| 500+ | $ 0.3192 | $ 159.60 |
| 1,000+ | $ 0.3146 | $ 314.60 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | - | |
| Current - Continuous Drain(Id) | 15A | |
| Pd - Power Dissipation | 11W | |
| RDS(on) | 74.5mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 446pF | |
| Gate Charge(Qg) | 12nC@10V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 83pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | - | |
| Current - Continuous Drain(Id) | 15A | |
| Pd - Power Dissipation | 11W | |
| RDS(on) | 74.5mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Drain to Source Voltage | 60V |
| Type | Description | |
|---|---|---|
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 446pF | |
| Gate Charge(Qg) | 12nC@10V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 83pF |
Report an ErrorShow similar products (0) >
Features
AI Translation
- TrenchFET® Power MOSFET
- AEC-Q101 Qualified
- 100% Tested for Rg and UIS
- RoHS Compliant and Halogen-Free
- N-Channel MOSFET
Applications
AI Translation
- Zero-current-switching resonant mode
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

