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DIODES DMN33D8LDW-13 product image
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DIODES DMN33D8LDW-13RoHS

Manufacturer
DIODES
MPN
DMN33D8LDW-13
LCSC Part #
C17642187
Packaging
SOT-363
Customer #
Key Attributes
250mA 350mW 7Ω@2.5V 1.5V 2 N-Channel SOT-363 FET, MOSFET Arrays RoHS
Datasheetpdf iconDIODES DMN33D8LDW-13
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.1123$ 0.11
200+$ 0.0448$ 8.96
500+$ 0.0433$ 21.65
1,000+$ 0.0426$ 42.60
Standard Packaging10000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerDIODES
PackagingSOT-363
Current - Continuous Drain(Id)250mA
Pd - Power Dissipation350mW
RDS(on)7Ω@2.5V
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)8pF
Number2 N-Channel
Input Capacitance(Ciss)48pF
Gate Charge(Qg)1.23nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)11pF
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Introduction

AI Translation

This MOSFET has been designed to minimize the on-state resistance (Ros(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Features

AI Translation
  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • ESD Protected Gate to 2kV
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device Qualified to AEC-Q101 standards for High Reliability

Applications

AI Translation
  • Motor Control
  • Power Management Functions
  • DC-DC Converters Backlighting