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DIODES DMN33D8LDWQ-13 product image
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DIODES DMN33D8LDWQ-13RoHS

Manufacturer
DIODES
MPN
DMN33D8LDWQ-13
LCSC Part #
C17635308
Packaging
SOT-363
Customer #
Key Attributes
250mA 350mW 7Ω@2.5V 1.5V 2 N-Channel SOT-363 FET, MOSFET Arrays RoHS
Datasheetpdf iconDIODES DMN33D8LDWQ-13
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.1456$ 0.15
200+$ 0.0581$ 11.62
500+$ 0.0562$ 28.10
1,000+$ 0.0552$ 55.20
Standard Packaging10000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerDIODES
PackagingSOT-363
Current - Continuous Drain(Id)250mA
Pd - Power Dissipation350mW
RDS(on)7Ω@2.5V
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)8pF
Number2 N-Channel
Input Capacitance(Ciss)48pF
Gate Charge(Qg)1.23nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)11pF
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Introduction

AI Translation

This MOSFET is designed to meet the stringent requirements of automotive applications. It complies with AEC-Q101 and supports PPAP, suitable for the following applications:

  • Motor control
  • DC-DC converters
  • Backlighting

Features

AI Translation
  • Low on-resistance
  • Low input capacitance
  • Fast switching speed
  • ESD protection
  • Fully lead-free and fully RoHS compliant
  • Halogen- and antimony-free, "Green" device
  • AEC-Q101 high-reliability qualified
  • PPAP capable

Applications

AI Translation
  • Motor Control - DC-DC Converter - Backlight Source