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VISHAY SIRB40DP-T1-GE3 product image
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VISHAY SIRB40DP-T1-GE3RoHS

Manufacturer
VISHAY
MPN
SIRB40DP-T1-GE3
LCSC Part #
C17611288
Packaging
PowerPAK-SO-8
Customer #
Key Attributes
40A 4.2mΩ@4.5V 46.2W 2.4V 2 N-Channel PowerPAK-SO-8 FET, MOSFET Arrays RoHS
Datasheetpdf iconVISHAY SIRB40DP-T1-GE3

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerVISHAY
PackagingPowerPAK-SO-8
Current - Continuous Drain(Id)40A
RDS(on)4.2mΩ@4.5V
Pd - Power Dissipation46.2W
Gate Threshold Voltage (Vgs(th))2.4V
Drain to Source Voltage40V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)102pF
Number2 N-Channel
Input Capacitance(Ciss)4.29nF
Gate Charge(Qg)93nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)680pF
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Features

AI Translation
  • TrenchFET 4th generation power MOSFET
  • Optimized for lowest R<sub>DS</sub> - Q<sub>oss</sub> figure of merit
  • Q<sub>qd</sub>/Q<sub>gs</sub> ratio < 1, optimized switching characteristics
  • 100% R<sub>g</sub> and UIS tested

Applications

AI Translation
  • DC/DC Converters - DC/AC Inverters - Synchronous Rectification - Battery and Load Switches
In-Stock: 7
7 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.8407$ 0.84
10+$ 0.8185$ 8.19
30+$ 0.8043$ 24.13
100+$ 0.7916$ 79.16
Standard Packaging3000/Full Reel
Better price for more quantity?
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