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TOSHIBA SSM6N35AFE,LF product image
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TOSHIBA SSM6N35AFE,LFRoHS

Manufacturer
TOSHIBA
MPN
SSM6N35AFE,LF
LCSC Part #
C17584221
Packaging
SOT-563(SOT-666)
Customer #
Key Attributes
MOSFET N-CH 20V 250mA SOT-563(SOT-666)
Datasheetpdf iconTOSHIBA SSM6N35AFE,LF
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Minimum: 5Multiple: 5Sales Unit: Piece
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QtyUnit Price(Reference Only)Total Amount
5+$ 0.1567$ 0.78
50+$ 0.1274$ 6.37
150+$ 0.1128$ 16.92
500+$ 0.1018$ 50.90
2,500+$ 0.093$ 232.50
4,000+$ 0.0886$ 354.40
Standard Packaging4000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerTOSHIBA
PackagingSOT-563(SOT-666)
Drain to Source Voltage20V
Current - Continuous Drain(Id)250mA
RDS(on)9Ω@1.2V
Pd - Power Dissipation250mW
Gate Threshold Voltage (Vgs(th))1V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)10pF
Number2 N-Channel
Input Capacitance(Ciss)36pF
Gate Charge(Qg)340pC@4.5V
Operating Temperature-
Output Capacitance(Coss)12pF
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Features

AI Translation
  • 1.2 V drive
  • Low drain - source on - resistance: RDS(ON)=9.0 Ω (max) (@VGS = 1.2 V, ID = 10 mA)
  • RDS(ON)=3.1 Ω (max) (@VGS = 1.5 V, ID = 20 mA)
  • RDS(ON)=2.4 Ω (max) (@VGS = 1.8 V, ID = 150 mA)
  • RDS(ON)=1.6 Ω (max) (@VGS = 2.5 V, ID = 150 mA)
  • RDS(ON)=1.1 Ω (max) (@VGS = 4.5 V, ID = 150 mA)

Applications

AI Translation
  • High - Speed Switching Analog Switches