NTE Electronics NTE3083
| Manufacturer | |
| MPN | NTE3083 |
| LCSC Part # | C17581083 |
| Packaging | DIP-6 |
| Customer # | |
| Key Attributes | 125mA 1.2V@50mA,10mA 30V 25V 1.15V DC DIP-6 Transistor, Photovoltaic Output Optoisolators RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Manufacturer | NTE Electronics | |
| Packaging | DIP-6 | |
| Rise time | 80us | |
| Fall time | 80us | |
| Output Current | 125mA | |
| Vce Saturation(VCE(sat)) | 1.2V@50mA,10mA | |
| Load Voltage | 30V | |
| Reverse Voltage | 25V | |
| Current transfer ratio | 200%;400% | |
| Voltage - Forward(Vf) | 1.15V | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 3.55kV | |
| Number of Channels | 1 | |
| Features | Darlington output structure |
| Type | Description | |
|---|---|---|
| Category | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Manufacturer | NTE Electronics | |
| Packaging | DIP-6 | |
| Rise time | 80us | |
| Fall time | 80us | |
| Output Current | 125mA | |
| Vce Saturation(VCE(sat)) | 1.2V@50mA,10mA | |
| Load Voltage | 30V |
| Type | Description | |
|---|---|---|
| Reverse Voltage | 25V | |
| Current transfer ratio | 200%;400% | |
| Voltage - Forward(Vf) | 1.15V | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 3.55kV | |
| Number of Channels | 1 | |
| Features | Darlington output structure |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The NTE3083 contains a gallium arsenide infrared emitter optically coupled to a silicon planer photo– darlington in a 6–Lead DIP type package.
Features
AI Translation
- High Sensitivity: 1mA on the Input will Sink a TTL gate
- High Isolation: 3550VDC, 10^12Ω, 0.5pF
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 7.8052 | $ 7.81 |
| 200+ | $ 3.1142 | $ 622.84 |
| 500+ | $ 3.0112 | $ 1505.60 |
| 1,000+ | $ 2.9597 | $ 2959.70 |
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Manufacturer | NTE Electronics | |
| Packaging | DIP-6 | |
| Rise time | 80us | |
| Fall time | 80us | |
| Output Current | 125mA | |
| Vce Saturation(VCE(sat)) | 1.2V@50mA,10mA | |
| Load Voltage | 30V | |
| Reverse Voltage | 25V | |
| Current transfer ratio | 200%;400% | |
| Voltage - Forward(Vf) | 1.15V | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 3.55kV | |
| Number of Channels | 1 | |
| Features | Darlington output structure |
| Type | Description | |
|---|---|---|
| Category | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Manufacturer | NTE Electronics | |
| Packaging | DIP-6 | |
| Rise time | 80us | |
| Fall time | 80us | |
| Output Current | 125mA | |
| Vce Saturation(VCE(sat)) | 1.2V@50mA,10mA | |
| Load Voltage | 30V |
| Type | Description | |
|---|---|---|
| Reverse Voltage | 25V | |
| Current transfer ratio | 200%;400% | |
| Voltage - Forward(Vf) | 1.15V | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 3.55kV | |
| Number of Channels | 1 | |
| Features | Darlington output structure |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The NTE3083 contains a gallium arsenide infrared emitter optically coupled to a silicon planer photo– darlington in a 6–Lead DIP type package.
Features
AI Translation
- High Sensitivity: 1mA on the Input will Sink a TTL gate
- High Isolation: 3550VDC, 10^12Ω, 0.5pF
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541490000 |
| USHTS | 8541491010 |
| TARIC | 8541490000 |
| CAHTS | 8541490090 |
| BRHTS | 85414900 |
| INHTS | 85414900 |
| MXHTS | 8541.40.02 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541490000 |
| USHTS | 8541491010 |
| TARIC | 8541490000 |
| Type | Details |
|---|---|
| CAHTS | 8541490090 |
| BRHTS | 85414900 |
| INHTS | 85414900 |
| MXHTS | 8541.40.02 |

