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DIODES DMC3016LDV-13
| Manufacturer | |
| MPN | DMC3016LDV-13 |
| LCSC Part # | C17557176 |
| Packaging | PowerDI3333-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH+P-CH ARR 30V 21A PowerDI3333-8 |
| Datasheet | DIODES DMC3016LDV-13 |
| RoHS Compliance | 5 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | PowerDI3333-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 21A | |
| Pd - Power Dissipation | 1.8W | |
| RDS(on) | 38mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 116pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 1.188nF | |
| Gate Charge(Qg) | 21nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 154pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | PowerDI3333-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 21A | |
| Pd - Power Dissipation | 1.8W | |
| RDS(on) | 38mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Type | Description | |
|---|---|---|
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 116pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 1.188nF | |
| Gate Charge(Qg) | 21nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 154pF |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
AI Translation
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Complementary Pair MOSFET
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
Applications
AI Translation
- Power Management Functions
- Analog Switch
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.7198 | $ 0.72 |
| 10+ | $ 0.7116 | $ 7.12 |
| 30+ | $ 0.7051 | $ 21.15 |
| 100+ | $ 0.6986 | $ 69.86 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | PowerDI3333-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 21A | |
| Pd - Power Dissipation | 1.8W | |
| RDS(on) | 38mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 116pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 1.188nF | |
| Gate Charge(Qg) | 21nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 154pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | PowerDI3333-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 21A | |
| Pd - Power Dissipation | 1.8W | |
| RDS(on) | 38mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Type | Description | |
|---|---|---|
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 116pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 1.188nF | |
| Gate Charge(Qg) | 21nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 154pF |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
AI Translation
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Complementary Pair MOSFET
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
Applications
AI Translation
- Power Management Functions
- Analog Switch
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| HSBB3907 | HUASHUO | PRPAK-8(3x3) | 500 | $ 0.1619 | ||
| AGM308MAP | AGMSEMI | PDFN3.3x3.3-8 | 30 | $ 0.2427 | ||
| XR40G30D | XNRUSEMI | PDFN-8L(3.3x3.3) | 4,165 | $0.1775 $0.1868 | ||
| LWD3005AD3 | Lewa Micro | PDFN-8L(3.3x3.3) | 5,000 | $ 0.2397 | ||
| XR30G30D | XNRUSEMI | PDFN3333-8L | 3,290 | $ 0.1335 | ||
| LWD3001AD3 | Lewa Micro | PDFN-8L(3.3x3.3) | 4,805 | $ 0.2782 | ||
| LWD4003AD3 | Lewa Micro | PDFN-8L(3.3x3.3) | 4,910 | $ 0.2782 | ||
| CMSC12NP04 | Cmos | DFN-8(3.3x3.3) | 60 | $0.2259 $0.2377 | ||
| DMC3016LDV-7 | DIODES | PowerDI3333-8 | 0 | $ 0.7945 | ||
| AGM628MAP | AGMSEMI | PDFN-8(3.3x3.3) | 0 | $ 0.2677 |