MICROCHIP APTM100H45SCTG
| Manufacturer | |
| MPN | APTM100H45SCTG |
| LCSC Part # | C17538972 |
| Packaging | - |
| Customer # | |
| Key Attributes | 18A 540mΩ@10V 357W 5V 4 N-Channel FET, MOSFET Arrays RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | MICROCHIP | |
| Packaging | - | |
| Configuration | Full bridge | |
| Current - Continuous Drain(Id) | 18A | |
| RDS(on) | 540mΩ@10V | |
| Pd - Power Dissipation | 357W | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Drain to Source Voltage | 1kV | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF | |
| Number | 4 N-Channel | |
| Input Capacitance(Ciss) | 4.35nF | |
| Gate Charge(Qg) | 154nC@10V | |
| Operating Temperature | -40℃~+150℃ | |
| Output Capacitance(Coss) | 715pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | MICROCHIP | |
| Packaging | - | |
| Configuration | Full bridge | |
| Current - Continuous Drain(Id) | 18A | |
| RDS(on) | 540mΩ@10V | |
| Pd - Power Dissipation | 357W | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 1kV | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF | |
| Number | 4 N-Channel | |
| Input Capacitance(Ciss) | 4.35nF | |
| Gate Charge(Qg) | 154nC@10V | |
| Operating Temperature | -40℃~+150℃ | |
| Output Capacitance(Coss) | 715pF |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Power MOS 7 MOSFETs
- Low on-resistance (RDSon)
- Low input capacitance and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Paralleled SiC Schottky diodes
- Zero reverse recovery
- Zero forward recovery
- Switching characteristics independent of temperature
- Positive temperature coefficient of forward voltage (VF)
- Kelvin source for easy gate drive
- Ultra-low stray inductance
- Symmetrical design
- Lead frame for power connections
- Integrated thermistor for temperature monitoring
- Highly integrated
Applications
AI Translation
- Motor Control
- Switch Mode Power Supply
- Uninterruptible Power Supply
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 229.0797 | $ 229.08 |
| 200+ | $ 215.1521 | $ 43030.42 |
| 500+ | $ 207.9624 | $ 103981.20 |
| 1,000+ | $ 204.4101 | $ 204410.10 |
Standard Packaging1/Full Bag | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | MICROCHIP | |
| Packaging | - | |
| Configuration | Full bridge | |
| Current - Continuous Drain(Id) | 18A | |
| RDS(on) | 540mΩ@10V | |
| Pd - Power Dissipation | 357W | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Drain to Source Voltage | 1kV | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF | |
| Number | 4 N-Channel | |
| Input Capacitance(Ciss) | 4.35nF | |
| Gate Charge(Qg) | 154nC@10V | |
| Operating Temperature | -40℃~+150℃ | |
| Output Capacitance(Coss) | 715pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | MICROCHIP | |
| Packaging | - | |
| Configuration | Full bridge | |
| Current - Continuous Drain(Id) | 18A | |
| RDS(on) | 540mΩ@10V | |
| Pd - Power Dissipation | 357W | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 1kV | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF | |
| Number | 4 N-Channel | |
| Input Capacitance(Ciss) | 4.35nF | |
| Gate Charge(Qg) | 154nC@10V | |
| Operating Temperature | -40℃~+150℃ | |
| Output Capacitance(Coss) | 715pF |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Power MOS 7 MOSFETs
- Low on-resistance (RDSon)
- Low input capacitance and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Paralleled SiC Schottky diodes
- Zero reverse recovery
- Zero forward recovery
- Switching characteristics independent of temperature
- Positive temperature coefficient of forward voltage (VF)
- Kelvin source for easy gate drive
- Ultra-low stray inductance
- Symmetrical design
- Lead frame for power connections
- Integrated thermistor for temperature monitoring
- Highly integrated
Applications
AI Translation
- Motor Control
- Switch Mode Power Supply
- Uninterruptible Power Supply
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

