VISHAY SQJB70EP-T1_BE3
| Manufacturer | |
| MPN | SQJB70EP-T1_BE3 |
| LCSC Part # | C17527637 |
| Packaging | - |
| Customer # | |
| Key Attributes | 11.3A 95mΩ@10V 27W 3.5V 2 N-Channel FET, MOSFET Arrays RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | - | |
| Current - Continuous Drain(Id) | 11.3A | |
| RDS(on) | 95mΩ@10V | |
| Pd - Power Dissipation | 27W | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Drain to Source Voltage | 100V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 220pF | |
| Gate Charge(Qg) | 4nC@10V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 160pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | - | |
| Current - Continuous Drain(Id) | 11.3A | |
| RDS(on) | 95mΩ@10V | |
| Pd - Power Dissipation | 27W | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Drain to Source Voltage | 100V |
| Type | Description | |
|---|---|---|
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 220pF | |
| Gate Charge(Qg) | 4nC@10V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 160pF |
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Features
AI Translation
- Trench power MOSFET
- AEC-Q101 qualified
- 100% tested for gate resistance (Rg) and unclamped inductive switching (UIS)
- RoHS compliant
- Halogen-free
- N-channel MOSFET
Applications
AI Translation
- Switching applications
Out of Stock
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.8301 | $ 0.83 |
| 200+ | $ 0.3318 | $ 66.36 |
| 500+ | $ 0.3212 | $ 160.60 |
| 1,000+ | $ 0.3151 | $ 315.10 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | - | |
| Current - Continuous Drain(Id) | 11.3A | |
| RDS(on) | 95mΩ@10V | |
| Pd - Power Dissipation | 27W | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Drain to Source Voltage | 100V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 220pF | |
| Gate Charge(Qg) | 4nC@10V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 160pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | - | |
| Current - Continuous Drain(Id) | 11.3A | |
| RDS(on) | 95mΩ@10V | |
| Pd - Power Dissipation | 27W | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Drain to Source Voltage | 100V |
| Type | Description | |
|---|---|---|
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 220pF | |
| Gate Charge(Qg) | 4nC@10V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 160pF |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Trench power MOSFET
- AEC-Q101 qualified
- 100% tested for gate resistance (Rg) and unclamped inductive switching (UIS)
- RoHS compliant
- Halogen-free
- N-channel MOSFET
Applications
AI Translation
- Switching applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

