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DIODES DMN33D9LV-13 product image
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DIODES DMN33D9LV-13RoHS

Manufacturer
MPN
DMN33D9LV-13
LCSC Part #
C17513693
Packaging
SOT-563
Customer #
Key Attributes
350mA 430mW 7Ω@2.5V 1.5V 2 N-Channel SOT-563 FET, MOSFET Arrays RoHS
Datasheetpdf iconDIODES DMN33D9LV-13
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.1734$ 0.17
200+$ 0.0692$ 13.84
500+$ 0.0669$ 33.45
1,000+$ 0.0658$ 65.80
Standard Packaging10000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerDIODES
PackagingSOT-563
Current - Continuous Drain(Id)350mA
Pd - Power Dissipation430mW
RDS(on)7Ω@2.5V
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)48pF
Gate Charge(Qg)1.23nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)-

Introduction

AI Translation

This MOSFET is meticulously engineered to minimize on-resistance RDS(ON) while maintaining exceptional switching performance, making it ideal for high-efficiency power management applications.

Features

AI Translation
  • Low on-resistance
  • Low input capacitance
  • Fast switching speed
  • Gate with 2kV ESD protection
  • Fully lead-free and RoHS compliant
  • Halogen and antimony-free, "Green" device
  • AEC-Q101 qualified, high reliability

Applications

AI Translation
  • Motor control
  • Power management functions
  • DC-DC converters
  • Backlight illumination