GeneSiC Semiconductor MURH10020R
| Manufacturer | |
| MPN | MURH10020R |
| LCSC Part # | C17506826 |
| Packaging | - |
| Customer # | |
| Key Attributes | 75ns 200V 1V@100A 100A Single Diodes RoHS |
| Datasheet | GeneSiC Semiconductor MURH10020R |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | GeneSiC Semiconductor | |
| Packaging | - | |
| Reverse Recovery Time (trr) | 75ns | |
| Diode Configuration | - | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 200V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1V@100A | |
| Reverse Leakage Current (Ir) | 25uA@50V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 100A |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | GeneSiC Semiconductor | |
| Packaging | - | |
| Reverse Recovery Time (trr) | 75ns | |
| Diode Configuration | - | |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 200V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1V@100A | |
| Reverse Leakage Current (Ir) | 25uA@50V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 100A |
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Introduction
AI Translation
Silicon ultra-fast recovery diode, repetitive peak reverse voltage VRRM 50V - 200V, average forward current IF(AV) 100A.
Features
AI Translation
- High surge capability
- Repetitive reverse peak voltage V<sub>RRM</sub> range: 50V to 200V
- Insensitive to electrostatic discharge
- D-67 package
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|---|---|---|
| 1+ | $ 109.223 | $ 109.22 |
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| 1,008+ | $ 41.4051 | $ 41736.34 |
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | GeneSiC Semiconductor | |
| Packaging | - | |
| Reverse Recovery Time (trr) | 75ns | |
| Diode Configuration | - | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 200V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1V@100A | |
| Reverse Leakage Current (Ir) | 25uA@50V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 100A |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | GeneSiC Semiconductor | |
| Packaging | - | |
| Reverse Recovery Time (trr) | 75ns | |
| Diode Configuration | - | |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 200V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1V@100A | |
| Reverse Leakage Current (Ir) | 25uA@50V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 100A |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Silicon ultra-fast recovery diode, repetitive peak reverse voltage VRRM 50V - 200V, average forward current IF(AV) 100A.
Features
AI Translation
- High surge capability
- Repetitive reverse peak voltage V<sub>RRM</sub> range: 50V to 200V
- Insensitive to electrostatic discharge
- D-67 package
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |

