NTE Electronics NTE326
| Manufacturer | |
| MPN | NTE326 |
| LCSC Part # | C17503315 |
| Packaging | TO-92 |
| Customer # | |
| Key Attributes | 310mW 1 P-Channel 2mA 40V TO-92 JFETs RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-92 | |
| FET Type | P-Channel | |
| Ciss-Input Capacitance | 7pF | |
| Pd - Power Dissipation | 310mW | |
| Number | 1 P-Channel | |
| Drain Current (Idss) | 2mA | |
| Reverse Transfer Capacitance (Crss) | 1pF | |
| Configuration | - | |
| RDS(on) | - | |
| operating temperature | -65℃~+135℃ | |
| Gate-Source Breakdown Voltage (Vgss) | 40V | |
| Output Capacitance(Coss) | - | |
| Gate-Source Cutoff Voltage (VGS(off)) | 1V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-92 | |
| FET Type | P-Channel | |
| Ciss-Input Capacitance | 7pF | |
| Pd - Power Dissipation | 310mW | |
| Number | 1 P-Channel | |
| Drain Current (Idss) | 2mA |
| Type | Description | |
|---|---|---|
| Reverse Transfer Capacitance (Crss) | 1pF | |
| Configuration | - | |
| RDS(on) | - | |
| operating temperature | -65℃~+135℃ | |
| Gate-Source Breakdown Voltage (Vgss) | 40V | |
| Output Capacitance(Coss) | - | |
| Gate-Source Cutoff Voltage (VGS(off)) | 1V |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Drain-Gate Voltage V_DG: 40V
- Reverse Gate-Source Voltage VGSR: 40V
- Forward Gate Current |G(f)|: 10mA
- Total Device Dissipation (T_A = +25°C) P_D: 310mW
- Derate above 25°C: 2.82mW/°C
- Operating Junction Temperature Range T_J: -65°C to +135°C
- Storage Temperature Range T_Stg: -55°C to +150°C
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 7.9112 | $ 7.91 |
| 200+ | $ 3.1566 | $ 631.32 |
| 500+ | $ 3.0521 | $ 1526.05 |
| 1,000+ | $ 2.9991 | $ 2999.10 |
Standard Packaging10/Full Bag | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-92 | |
| FET Type | P-Channel | |
| Ciss-Input Capacitance | 7pF | |
| Pd - Power Dissipation | 310mW | |
| Number | 1 P-Channel | |
| Drain Current (Idss) | 2mA | |
| Reverse Transfer Capacitance (Crss) | 1pF | |
| Configuration | - | |
| RDS(on) | - | |
| operating temperature | -65℃~+135℃ | |
| Gate-Source Breakdown Voltage (Vgss) | 40V | |
| Output Capacitance(Coss) | - | |
| Gate-Source Cutoff Voltage (VGS(off)) | 1V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-92 | |
| FET Type | P-Channel | |
| Ciss-Input Capacitance | 7pF | |
| Pd - Power Dissipation | 310mW | |
| Number | 1 P-Channel | |
| Drain Current (Idss) | 2mA |
| Type | Description | |
|---|---|---|
| Reverse Transfer Capacitance (Crss) | 1pF | |
| Configuration | - | |
| RDS(on) | - | |
| operating temperature | -65℃~+135℃ | |
| Gate-Source Breakdown Voltage (Vgss) | 40V | |
| Output Capacitance(Coss) | - | |
| Gate-Source Cutoff Voltage (VGS(off)) | 1V |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Drain-Gate Voltage V_DG: 40V
- Reverse Gate-Source Voltage VGSR: 40V
- Forward Gate Current |G(f)|: 10mA
- Total Device Dissipation (T_A = +25°C) P_D: 310mW
- Derate above 25°C: 2.82mW/°C
- Operating Junction Temperature Range T_J: -65°C to +135°C
- Storage Temperature Range T_Stg: -55°C to +150°C
C17503315 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

