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PANJIT PJS6603_S2_00001 product image
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PANJIT PJS6603_S2_00001RoHS

Manufacturer
PANJITAsian Brands
MPN
PJS6603_S2_00001
LCSC Part #
C17452912
Packaging
SOT-23-6
Customer #
Key Attributes
4.4A 110mΩ@10V 1.25W 2.1V 1 N-Channel + 1 P-Channel SOT-23-6 FET, MOSFET Arrays RoHS
Datasheetpdf iconPANJIT PJS6603_S2_00001
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.0814$ 0.08
200+$ 0.0325$ 6.50
500+$ 0.0314$ 15.70
1,000+$ 0.0309$ 30.90
Standard Packaging10000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerPANJIT
PackagingSOT-23-6
Current - Continuous Drain(Id)4.4A
RDS(on)110mΩ@10V
Pd - Power Dissipation1.25W
Gate Threshold Voltage (Vgs(th))2.1V
Drain to Source Voltage30V
TypeN-Channel + P-Channel
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)396pF
Gate Charge(Qg)9.8nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)47pF
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Introduction

AI Translation

A 1700 W ultra-rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz frequency range.

Features

AI Translation
  • Advanced trench process technology
  • Specifically designed for switching loads, PWM applications, and more
  • Lead-free, RoHS 2.0 compliant
  • Green molding compound compliant with IEC 61249

Applications

AI Translation
  • Industrial, scientific, and medical applications — broadcast transmitter applications