NTE Electronics 2N3819
| Manufacturer | |
| MPN | 2N3819 |
| LCSC Part # | C17399914 |
| Packaging | TO-92-3 |
| Customer # | |
| Key Attributes | 20mA 350mW 1 N-channel 25V TO-92-3 JFETs |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-92-3 | |
| FET Type | N-Channel | |
| Ciss-Input Capacitance | 8pF | |
| Drain Current (Idss) | 20mA | |
| Pd - Power Dissipation | 350mW | |
| Number | 1 N-channel | |
| Reverse Transfer Capacitance (Crss) | - | |
| Configuration | - | |
| operating temperature | - | |
| RDS(on) | - | |
| Gate-Source Breakdown Voltage (Vgss) | 25V | |
| Gate-Source Cutoff Voltage (VGS(off)) | 8V | |
| Output Capacitance(Coss) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-92-3 | |
| FET Type | N-Channel | |
| Ciss-Input Capacitance | 8pF | |
| Drain Current (Idss) | 20mA | |
| Pd - Power Dissipation | 350mW | |
| Number | 1 N-channel |
| Type | Description | |
|---|---|---|
| Reverse Transfer Capacitance (Crss) | - | |
| Configuration | - | |
| operating temperature | - | |
| RDS(on) | - | |
| Gate-Source Breakdown Voltage (Vgss) | 25V | |
| Gate-Source Cutoff Voltage (VGS(off)) | 8V | |
| Output Capacitance(Coss) | - |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
2N3819 is an N-channel RF amplifier transistor designed for RF amplifier and mixer applications operating up to 450MHz, and is also suitable for analog switches requiring low capacitance.
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 3.9155 | $ 3.92 |
| 200+ | $ 1.5632 | $ 312.64 |
| 500+ | $ 1.5102 | $ 755.10 |
| 1,000+ | $ 1.4844 | $ 1484.40 |
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-92-3 | |
| FET Type | N-Channel | |
| Ciss-Input Capacitance | 8pF | |
| Drain Current (Idss) | 20mA | |
| Pd - Power Dissipation | 350mW | |
| Number | 1 N-channel | |
| Reverse Transfer Capacitance (Crss) | - | |
| Configuration | - | |
| operating temperature | - | |
| RDS(on) | - | |
| Gate-Source Breakdown Voltage (Vgss) | 25V | |
| Gate-Source Cutoff Voltage (VGS(off)) | 8V | |
| Output Capacitance(Coss) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-92-3 | |
| FET Type | N-Channel | |
| Ciss-Input Capacitance | 8pF | |
| Drain Current (Idss) | 20mA | |
| Pd - Power Dissipation | 350mW | |
| Number | 1 N-channel |
| Type | Description | |
|---|---|---|
| Reverse Transfer Capacitance (Crss) | - | |
| Configuration | - | |
| operating temperature | - | |
| RDS(on) | - | |
| Gate-Source Breakdown Voltage (Vgss) | 25V | |
| Gate-Source Cutoff Voltage (VGS(off)) | 8V | |
| Output Capacitance(Coss) | - |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
2N3819 is an N-channel RF amplifier transistor designed for RF amplifier and mixer applications operating up to 450MHz, and is also suitable for analog switches requiring low capacitance.
C17399914 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

